ARF462A ADPOW | Alldatasheet
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS VDS (ON) IDSS IGSS gfs VGS (TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID (ON) = 11.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS , ID = 50mA) MIN TYP MAX 200 2.5 250 ±100 4 6.5 8 UNIT Volts µA nA mhos Volts Symbol VDSS VDGO ID VGS PD R qJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF462A/B 200 200 ±30 250 0.50 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation.
- Specified 65 Volt, 40.68 MHz Characteristics:
- Output Power = 150 Watts.
- Gain = 15dB (Class AB)
- Efficiency = 75% (Class C)
- Low Cost Common Source RF Package.
- Low Vth thermal coefficient.
- Low Thermal Resistance.
- Optimized SOA for Superior Ruggedness. TO-247 ARF462A ARF462B G D S Common Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5997 Rev A 7-2001
GAIN (dB) FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 030 45 60 75 90 105 120 Class C VDD = 150V Pout = 150W 24 6 8 1 0 CAPACITANCE (pf) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10000 5000 1000 500 100 .1 .5 1 5 10 50 150 ID , DRAIN CURRENT (AMPERES) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID , DRAIN CURRENT (AMPERES) VDS > ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°CTJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) C iss C oss C rss 1mS 10mS 100mS DC PRELIMINARY DYNAMIC CHARACTERISTICS ARF462A/B Symbol C iss C oss C rss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 1.6W MIN TYP MAX 1350 435 200 71 5 51 0 23 40 12 25 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol G PS h y Test Conditions f = 40.68 MHz IDQ = 100 mA VDD = 65V Pout = 150W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 13 15 50 55 UNIT dB
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein. 050-5997 Rev A 7-2001
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Source 2-Plcs. Top View ARF - A Device ARF - B Gate Drain Source Source Drain Gate Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. DUT C6C7 65V RF Output RF Input C1 -- 2200 pF 50V NPO mounted at device gate lead. C2-C5 -- Arco 463 Mica trimmer C6-C8 -- 10nF 500V COG chip L1 -- 3t #20 AWG .312"ID ~74nH L2 -- 4t #18 AWG .25" ID .25L ~86 nH L3 -- 10t #20 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF462A/B