ARF461A MICROSEMI | Alldatasheet

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MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push- pull scientifi c, commercial, medical and industrial RF power ampli fi er applications up to 65 MHz. They have been optimized for both linear and high effi ciency classes of operation.

  • Specifi ed 250 Volt, 40.68 MHz Characteristics:
  • Output Power = 150 Watts.
  • Gain = 13dB (Class AB)
  • Effi ciency = 75% (Class C)
  • Low Cost Common Source RF Package.
  • Low Vth thermal coeffi cient.
  • Low Thermal Resistance.
  • Optimized SOA for Superior Ruggedness.
  • RoHS Compliant ARF461A(G) ARF461B(G) Common Source Microsemi Website - http://www.microsemi.com Symbol Parameter ARF461AG/BG Unit VDSS Drain-Source Voltage 1000 VVDGO Drain-Gate Voltage 1000 ID Continuous Drain Current @ TC = 25°C 6.5 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W RθJC Junction to Case 0.50 °C/W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °CTL Lead Temperature: 0.063” from Case for 10 Sec. 300 Symbol Parameter Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1000 VVDS(ON) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V) 6.5 IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 3.25A) 3 4 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. TO-247

FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Class C VDD = 150V Pout = 150W GAIN (dB) ARF461A/B

1 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifi cations and information contained herein. 1 10 100 1000 0 2 4 6 8 CAPACITANCE (pf) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 5000 1000 500 100 .1 .5 1 5 10 50 200 ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°CTJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) Ciss Coss Crss 1mS 10mS 100mS DC 100uS Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Unit CISS Input Capacitance VGS = 0V VDS = 50V f = 1MHz 1700 pFCoss Output Capacitance 175 Crss Reverse Transfer Capacitance 50 td(on) Turn-On Delay Time VGS = 15V VDD = 0.5VDSS ID = ID (Cont.) @ 25°C RG = 1.6Ω ns tr Rise Time 5 td(off) Turn-off Delay Time 21 tf Fall Time 10.1 Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit GPS Common Source Amplifi er Power Gain f = 40.68MHz VGS = 0V VDD = 250V POUT = 150W 13 15 dB η Drain Effi ciency 70 75 % Ψ Electrical Ruggedness VSWR 10:1 No Degradation in Output Power

C1 -- 1800pF + 1000pF 100V chips mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 μF 500V ceramic chip C9 -- 2200 pF 500 V chip L1 -- 4t #20 AWG .25"ID .3 "L ~80nH L2 -- 7t #16 AWG .4" ID .5"L ~335nH L3 -- 25t #24 AWG .25"ID ~2.2uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF461A/B

40.68 MHz Test Circuit

NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifi ca- tions. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs. Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.