ARF460A MICROSEMI | Alldatasheet

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Technical content

125V, 150W, 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientifi c, commercial, medical and industrial RF power amplifi er applications up to 65MHz. They have been optimized for both linear and high effi ciency classes of operation.

  • Low Cost Common Source RF Package.
  • Low Vth thermal coeffi cient.
  • Low Thermal Resistance.
  • Optimized SOA for Superior Ruggedness
  • RoHS Compliant Symbol Parameter ARF460AG/BG Unit VDSS Drain-Source Voltage 500 VVDGO Drain-Gate Voltage 500 ID Continuous Drain Current @ TC = 25°C 14 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W RθJC Junction to Case 0.50 °C/W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °CTL Lead Temperature: 0.063” from Case for 10 Sec. 300 Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 VVDS(ON) On State Drain Voltage 1 (ID(ON) = 7A, VGS = 10V) 4 IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 7A) 3.3 5.5 8 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts Microsemi Website - http://www.microsemi.com 050-5966 Rev E 10-2007 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
  • Specifi ed 125 Volt, 40.68MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Ef fi ciency = 75% (Class C) TO-247 Common Source

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. C1R2 DUT 125V RF Output RF Input C1 -- 2000 pF 100V NPO chip mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 μF 500V ceramic chip C9 -- 2200 pF 500V chip L1 -- 4t #20 AWG .25"ID .3 "L ~80nH L2 -- 6t #16 AWG .312" ID .4"L ~185nH L3 -- 15t #24 AWG .25"ID ~.85uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF460A/B

40.68 MHz Test Circuit

NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifi cations. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.12 (.123) 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs.