ARF448A ADPOW | Alldatasheet
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS VDS (ON) IDSS IGSS gfs VGS (TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID (ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7.5A) Gate Threshold Voltage (VDS = VGS , ID = 50mA) MIN TYP MAX 450 250 ±100 5 8.5 UNIT Volts µA nA mhos Volts Symbol VDSS VDGO ID VGS PD R θJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF448A/448B 450 450 ±30 230 0.55 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
- Specified 150 Volt, 40.68 MHz Characteristics:
- Output Power = 250 Watts.
- Gain = 15dB (Class C)
- Efficiency = 75%
- Low Cost Common Source RF Package.
- Very High Breakdown for Improved Ruggedness.
- Low Thermal Resistance.
- Nitride Passivated Die for Improved Reliability. TO-247 ARF448A ARF448B G D S Common Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS ARF448A/448B Symbol C iss C oss C rss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 1.6Ω MIN TYP MAX 1400 1700 150 200 65 100 71 5 51 0 23 40 12 25 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol G PS η ψ Test Conditions f = 40.68 MHz VGS = 0V VDD = 150V Pout = 250W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 MIN TYP MAX 13 15 70 75 UNIT dB
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein. 1 5 10 50 100 500 GAIN (dB) FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Class C VDD = 150V Pout = 250W 0 2 468 CAPACITANCE (pf) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 1 5 10 50 150 ID , DRAIN CURRENT (AMPERES) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID , DRAIN CURRENT (AMPERES) VDS > ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°CTJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) 10µS 1mS 10mS 100mS DC 100µS C iss C oss C rss
15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Source 2-Plcs. Top View ARF448A Device ARF448B Gate Drain Source Source Drain Gate Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. DUT C6 C7 150V RF Output RF Input C1 -- 1800pF 100V chip C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 1" #16 AWG into hairpin ~9.6nH L2 -- 6t #16 AWG .25" ID ~165nH L3 -- 10t #18 AWG .25" ID ~0.47µH L4 -- VK200-4B ferrite choke ~3uH R1 -- 25 Ohm 1/2W Carbon T1 -- 9:1 Broadband Transformer
40.48 MHz Test Circuit
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 ARF448A/448B