ARF446G MICROSEMI | Alldatasheet

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a Mi . D ARF446G QvMicrosemi. , > — ARFAA7G POWER PRODUCTS GROUP Y / Ss 10-247 ) * ¢ Donotes ROHS Compliant / Po Free Terminal Finish wy Common if Source N-CHANNEL ENHANCEMENT MODE 250V 140W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. Specified 250 Volt, 40.68 MHz Characteristics: | *Low Cost Common Source RF Package. Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness. Gain = 15dB (Class C) Low Thermal Resistance. Efficiency = 75% © Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS All Ratings: T, = 25°C unless otherwise specified. Symbol | Parameter ARF446G/447G UNIT Drain-Source Voltage 900 Volts Drain-Gate Voltage 900 [1b | Coninuous Gran Gurent @ 1, =25°0 Amps TyTgrq | Operating and Storage Junction Temperature Range -55 to 150 a STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (Vag = OV, |, = 250 1A) 900 | [| Vpg(ON) | On State Drain Voltage © (I,(ON) = 3.5A, Vag = 10V) [| ; Zero Gate Voltage Drain Current (Vag = Vogg: Vag = OV) [ [| DSS | Zero Gate Voltage Drain Current (Vog = 0.8 Vogg, Vag = OV, Te = 125°C) Iggs | Gate-Source Leakage Current (Vag = 430V, Vig = OV) [| | st00 | na Qj | Forward Transconductance (Ving = 25V, |, = 3.5) Vgg(TH) | Gate Threshold Voltage (Vag = Veg. | = 50mA) 2 | [5 | vos} 5 Wids CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. ° Microsemi Website - http:/unwew.microsemi.com) 3

DYNAMIC CHARACTERISTICS ARF446G/447G [ symbot | Characteristic Test Conditions min | tye | Max | UNIT iss Veg = OV Reverse Transfer Capacitance f=1MHz | | a7 | 60 | Turf Delay Time lp=loemi@2ee || 23 | ao | FUNCTIONAL CHARACTERISTICS Common Source Amplifier Power Gain f= 27.12 MHz | fw | | | Drain étficency Vos" 0¥ Yoo =900¥ o | [« | | _v | electrical Ruggediness VSWR 20:1 Pou = 140W No Degradation in Output Power Gommon Sour Ampiir Power Gain asm |e [ls] |e | Electrical Ruggedness VSWR 20:1 Pout = 140W No Degradation in Output Power Pulse Test: Pulse width < 380 n&, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Vop = 250V. wT teers veo Trt ! {ji 4 SS SESS SS @ feo 3 LENS Cee z oS ~ & é im | i i g 100 BE See { oo SS S22 ae EE =| ra 8 gg Se po EE SE rat | =e EE Se] [PPP Tere %0 20304050 60 65 " 5 10 50 100 300 FREQUENCY (MHz) Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage Cd io i | SS SERS NG g Itt Ht = HHS NS é 4 _ | zg HH AISA @ 2 . § i 6 LT INA oes Bo Coo Hee ae

6 Ty= 125°C 4 {To =+28'C hoe

: 3 J} ed] »b eeetsoro | yee é Ty = 425°C: \\SINGLE PULSE) | 5 % 2 ri 6 8 ay 10 30 100 7000 3 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) g Figure 3, Typical Transter Characteristics Figure 4, Typical Maximum Safe Operating Area

12 16 — 7 5 lO g 86 = é QN 5 22 09 NY S 6 a TN 3 1

7 EERE ENG 3 LY LT TT

Ty * BAAR AA A+ +4] oh 1 1 TT (AL he To, CASE TEMPERATURE (°C) Vpgs, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Threshold Voltage vs Temperature Figure 6, Typical Output Characteristics 200 — Tame | Le 2 “(Gao [1] mol vogeaem [| eT nih, eg 2 |t= 40.68 MHz [| Y | u 16 Hf = 40.68 MHz, | Es 200 z = 2 re LF aN 2 wf Be “UZ TTT | ee Peo 100 z [TTT TT | 3 a) * sere 6 “ECCeeeeeeeee Pana fT im Z CPT] é [Ti Ti tT % 2 4 6 8 10 85 50 100 «(150 200 «250 ©6300 Pins POWER IN (WATTS) Pour, POWER OUT (WATTS) Figure 7, Typical Power Out vs Power In Figure 8, Typical Common Source Amplifier Gain vs Power Out 06 - — 7 EES ES Fe SS al = Poe me g a

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FF os Ee = =a g Fee a i 2 ocean er UT TT ar z = a eat ros i paee H F [et a | ty i a cai mai ai goo) L LTT A re e AECTANGULAR puLse DURATION (SECONDS) ‘0 ° Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Table 1 - Typical Class C Large Signal Input-Output Impedance 13.5 2.10-j6.4 73.0-j71 3 27.0 0.50 -j2.3 30.0 -j 57 o 40.0 0.30 - 50.4 15.0-j 42 w 65.0 0.46 +j 2.0 6.2 -j 25 Fy Zin - gate shunted by 25Q Ey Zo, - conjugate of optimum load impedance for 250W at 250V Fy

40.68 MHz Test Circuit

C1-C3 -- Arco 465 or equivalent C4-C6 -- 1nF S00V COG chip i4 L1 -- 2t #18 AWG .25" ID + L2 -- 3t #18 AWG .25" ID 250V L3 -- 8t #18 AWG .25" ID C4 cs £ ° L4-- VK200-4B ferrite choke 3H LT T a R1 -- 25 Ohm 1/2W Carbon L3 = = T1 -- 4:1 Broadband Transformer b ce c3 RF Output ut c2 RF Input DUT = 1 = © E or Serb @ SAC Tin, Silver, Copper E 16.26 (.640) - — | | Feel (8.8 (212) Dimensions in Miliimeters and (Inches) 6.18 (.242) BSC Liat 820 (248) NOTE: The ARF446G and ARF447G Gcomprise a symmetric | | rp | pair of RF power transistors and meet the same electrical 8 20.80 (.819) specifications. The device pin-outs are the mirror image 5 21.48 (845) | of each other to allow ease of use as a push-pull pair. 3 | te a | | | [emer tf — 28% (119 0.40 (.016) t Le 1.85 (088) Device 20.32 (.800) a 1 a (aa) Lot Gate ————Drain ‘ Source ——Source i | Drain ——— Gate pol keg - 8 2-Ples. w é z Microsemi's products are covered by one ormore of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 8 5,262,336 6,503,786 5,256,583 4,748, 103 5,283,202 5,231,474 5,434,095 5,528,058 andtoreign patents. US and Foreign patents pending. All Rights Reserved.