ARF446

ARF446_03 ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) On State Drain Voltage 1 (ID(ON) = 3.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) MIN TYP MAX 900 250 ±100 4 5.7 UNIT Volts mA nA mhos Volts Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF446/447 900 900 6.5 ±30 230 0.55 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 140W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 250 Volt, 40.68 MHz Characteristics: ¥ Output Power = 140 Watts. ¥ Gain = 15dB (Class C) ¥ Efficiency = 75% Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. TO-247 ARF446 ARF447G D S Common Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS ARF446/447 Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 300V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6W MIN TYP MAX 1500 1800 70 130 27 50 71 5 51 0 23 40 12 25 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Test Conditions f = 27.12 MHz VGS = 0V VDD = 300V Pout = 140W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 MIN TYP MAX UNIT dB

1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. GPS h y f = 40.68 MHz VGS = 0V VDD = 250V Pout = 140W No Degradation in Output Power Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 13 15 70 75 dB 1 5 10 50 100 1000 GAIN (dB) FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 010 20 30 40 50 60 65 Class C VDD = 250V Pout = 250W 0 2 468 CAPACITANCE (pf) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 3000 1000 500 100 1 5 10 50 100 300 Ciss Coss Crss ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°CTJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) 10mS 1mS 10mS 100mS DC 100mS

15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Source 2-Plcs. Top View ARF446 Device ARF447 Gate Drain Source Source Drain Gate Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. ARF446/447 DUT C4 C5 250V RF Output RF Input C1-C3 -- Arco 465 or equivalent C4-C6 -- 1nF 500V COG chip L1 -- 2t #18 AWG .25" ID L2 -- 3t #18 AWG .25" ID L3 -- 8t #18 AWG .25" ID L4 -- VK200-4B ferrite choke 3mH R1 -- 25 Ohm 1/2W Carbon T1 -- 4:1 Broadband Transformer

40.68 MHz Test Circuit

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.