ARF440 ADPOW | Alldatasheet

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N- CHANNEL ENHANCEMENT MODE RF POWER MOSFET D G S ARF440 125W 50V 13.56MHz ARF441 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications.

  • Specified 50 Volt, 13.56 MHz Characteristics:
  • Output Power = 125 Watts.
  • Gain = 21dB (Typ.)
  • Efficiency = 63% (Typ.)
  • Low Cost Common Source RF Package.
  • Very High Breakdown for Improved Ruggedness.
  • Low Thermal Resistance.
  • Nitride Passivated Die for Improved Reliability. Symbol BV DSS VDS (ON) IDSS IGSS gfs VGS (TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID (ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS , ID = 200mA) MIN TYP MAX 150 250 1000 ±100 UNIT Volts µA nA mhos Volts Symbol VDSS VDGO ID VGS PD R θJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF440/441 150 150 ±30 167 0.75 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W RF OPERATION 1-15MHz() POWER MOS IV ® 050-4406 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

+Vbias VDD = 50V Idq = 0.4A RF Output RF Input 2:1 C2R2 R1 3.3K 75-480pF .1µF 25-240pF RFC1 C9 C10 C11 .01µF .1µF 10µF (50V) 3.3K 3.3K .1µF BFC1 ATC"B" .01µF .01µF ATC"B" ATC"B" .01µF .01µF ATC"B" 0.5µH 0.4µH Parts List C1 = 75-480pF Compression Mica C2, C3 & C10 = .1µF @ 50V, Novacap #1210B104K500N C4 = 25-240pF Compression Mica C5, C6, C7, C8 & C9 = .01µF @ 50V, Novacap #1210B103K500N C11 = 10µF @ 50V Electrolytic R1, R2 & R3 = 1KΩ , 5%, 1/4W, Carbon Q1 = ARF440 Q2 = ARF441 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH L2 = 6.5 T of #18AWG, ID = .438", L = 0.4µH BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000 T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850 T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25Ω PTFE coax on a Fair-Rite #2643102002 shield bead. µi = 2000 PCB = .062" G10 Epoxy Glass. DYNAMIC CHARACTERISTICS ARF440/441 Symbol C iss C oss C rss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1 MHz MIN TYP MAX 755 900 155 215 55 90 UNIT pF FUNCTIONAL CHARACTERISTICS Symbol G PS η ψ MIN TYP MAX 18 21 UNIT dB Test Conditions VDD = 50V Pout = 125W IDQ = 200mA f = 13.56MHz No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 30:1

1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT 050-4406 Rev C

15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Dimensions in Millimeters and (Inches) Source ARF44O SOURCE GATE DRAIN 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.55 (.138) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) SOURCE DRAIN GATE Dimensions in Millimeters and (Inches) Source ARF44E 5.45 (.215) BSC 2-Plcs. 5.45 (.215) BSC 2-Plcs. ARF440/441 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. ARF441 ARF440 050-4406 Rev C USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61