ARF300 MICROSEMI | Alldatasheet

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Technical content

125V, 300W, 45MHz The ARF300 is a N-CHANNEL RF power transistor in a high effi ciency fl angeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifi ers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF power transistor making the pair well suited for bridge confi gurations

  • High Performance
  • High Voltage Breakdown and Large SOA for Superior Ruggedness
  • Low Thermal Resistance.
  • Capacitance matched with ARF301 P-Channel Symbol Parameter Ratings Unit VDSS Drain-Source Voltage 500 VVDGO Drain-Gate Voltage 500 ID Continuous Drain Current @ TC = 25°C 24 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 555 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 °CTL Lead Temperature: 0.063” from Case for 10 Sec. 300 Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 VVDS(ON) On State Drain Voltage 1 (ID(ON) = 12A, VGS = 10V) 3 4 IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 15V, ID = 12A) 5 8 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 10mA) 2.5 4 5 Volts Microsemi Website - http://www.microsemi.com 050-4948 Rev A 6-2008 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
  • Specifi ed 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15dB (Class E) Ef fi ciency = 80%
  • RoHS Compliant Symbol Parameter Min Typ Max Unit RθJC Junction to Case 0.15 °C/WRθJHS Junction to Sink (High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 Thermal Characteristics

1.141 0.009 0.140 x 60.100 x 4 0.16 0.980 0.507 0.963 0.890 0.257 R0.125 D 0.125 R0.050 0.135 0.237 0.04 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.