ARF1519 ADPOW | Alldatasheet
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 300µA) On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 10A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 6mA) MIN TYP MAX 1000 300 3000 ±600 31 4 2500 UNIT Volts µA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF1519 1000 ±30 1350 -55 to 200 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
- Specified 250 Volt, 13.56 MHz Characteristics:
- Output Power = 750 Watts.
- Gain = 17dB (Class C)
- Efficiency > 75%
- High Performance Power RF Package.
- Very High Breakdown for Improved Ruggedness.
- Low Thermal Resistance.
- Nitride Passivated Die for Improved Reliability. ARF1519 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.13 0.09 UNIT °C/W D S G Volts APT Website - http://www.advancedpower.com ARF1519 BeO 104T-100
1.000 .500.150r .500 .466 .750 1.500 1.250 .300 .200 .250 .250 .005 .040 .125d
1 Drain
2 Source
3 Source
4 Gate
Thermal Considerations and Package Mounting: The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When instal- led, an additional thermal impedance of 0.1°C/W between the package base and the mounting sur- face is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small sur- face irregularities. The heatsink should incorpo- rate a copper heat spreader to obtain best re- sults. Use 4-40 or M3 screws torqued to 1.2 Nm. HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide- BeO. Beryllium oxide dust is toxic when in- haled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. D S G
13.56 MHz Test Amp
Parts placement - Not to Scale. ARF1519 -- 13.56 MHz Test Circuit Output C8C9C7 C10 C5 C6 200V L2RF Input T1 C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer C1 C2 C3 DUT