ARF1518 ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID(ON) = 15A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 15A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) MIN TYP MAX 1000 .4 .6 100 1000 ±400 13 17 2500 UNIT Volts Ohms µA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF 1518 1000 ±30 1500 -55 to 200 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1518 is an RF power transistor designed for very high power class C, D, and E applications in scientific, commercial, medical and industrial RF power generators and amplifiers up to 40MHz.

  • Specified 250 Volt, 27.12 MHz Characteristics:
  • Output Power = 750 Watts.
  • Gain = 17dB (Class C)
  • Efficiency > 75%
  • High Performance Power RF Package.
  • Very High Breakdown for Improved Ruggedness.
  • Low Thermal Resistance.
  • Nitride Passivated Die for Improved Reliability. ARF1518 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.12 0.09 UNIT °C/W D S G Volts APT Website - http://www.advancedpower.com ARF1518 BeO 1525-100

DYNAMIC CHARACTERISTICS ARF1518 Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 500V ID = 30A @ 25°C RG = 1.6 Ω MIN TYP MAX 5400 6500 300 400 125 160 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Test Conditions f = 27.12 MHz VGS = 0V VDD = 250V Pout = 750W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 15 17 70 75 UNIT dB 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Table 1 - Typical Class AB Large Signal Impedance -- ARF1501 F (MHz) Zin (Ω)Z OL (Ω) Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 250V 2.0 13.5 10.6 -j 12.2 0.5 -j 2.7 0.22 -j 2.7 0.2 +j .12 31 -j 4.7 15.6 -j 16 6.2 -j 12.6 3.1 -j 9.4 ARF1518 BeO 1525-100 1.000 .500.150r .500 .466 .750 1.500 1.250 .300 .200 .250 .250 .005 .040 .125d

1 Drain

2 Source

3 Source

4 Gate

Thermal Considerations and Package Mounting: The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When instal- led, an additional thermal impedance of 0.1°C/W between the package base and the mounting sur- face is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small sur- face irregularities. The heatsink should incorpo- rate a copper heat spreader to obtain best re- sults. Use 4-40 or M3 screws torqued to 1.2 Nm. HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide- BeO. Beryllium oxide dust is toxic when in- haled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. D S G

ARF1518 -- 13.56 MHz Test Circuit Output C8C9C7 C10 C5 C6 250V L2RF Input T1 C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer C1 C2 C3 DUT

13.56 MHz Test Amp

Parts placement - Not to Scale.