ARF1505 MICROSEMI | Alldatasheet

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MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 12.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 12.5A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) MIN TYP MAX 1200 8 9.5 100 1000 ±400 5.5 6 TBD 3 5 UNIT Volts μA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF1505 1200 ±30 1500 -55 to 175 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientifi c, commercial, medical and industrial RF power generator and amplifi er applications up to 40 MHz.

  • Specifi ed 300 Volt, 27.12 MHz Characteristics:
  • Output Power = 750 Watts.
  • Gain = 17dB (Class C)
  • Effi ciency > 75%
  • High Performance Power RF Package.
  • Very High Breakdown for Improved Ruggedness.
  • Low Thermal Resistance.
  • Nitride Passivated Die for Improved Reliability. ARF1505 THERMAL CHARACTERISTICS Symbol RθJC RθJHS Characteristic (per package unless otherwise noted) Junction to Case Junction to Sink (Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.10 0.16 UNIT °C/W Volts ARF1505 BeO 1525-xx DSS GSS Microsemi Website - http://www.microsemi.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
  • RoHS Compliant

HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when in- haled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. Clamp Heat Sink D SS G SS D G SS SS ARF15-- BeO 1525-xx .005 .045 .250 .500 .500 1.065 .207 .207 .375 .105 typ. 1.065 D S G TYPICAL LARGE SIGNAL INPUT - OUPUT IMPEDANCE CHARACTERISTICS F (MHz) Zin (Ω)Z OL (Ω) 2.0 13.5 5.4 - j 9.6 0.30 - j 1.2 0.26 + j .58 0.36 + j 1.6 46 - j 10.5 16.4 - j 23 4.9 - j 14.6 2.3 - j 10.3 Zin - Gate shunted with 25Ω Z OL - Conjugate of optimum load for 750 Watts output I DQ = 100mA Vdd = 300V ARF1505 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) VGS = 10 & 9V 0.02 0.04 0.06 0.08 0.10 0.12 10-5 10-4 10-3 10-2 10 1.0 -1 ZθJC, THERMAL IMPEDANCE (°C/W) 0.5 0.1 0.3 0.7 D = 0.9

0.05 SINGLE PULSE Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2 PDM Note: Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resis- tance between junctions and case mounting surface is 0.10°C/W. When installed, an additional thermal impedance of 0.06°C/W between the package base and the mounting surface is smooth and fl at. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages."

ARF1505 -- 27.12 MHz Test Circuit 300V Vb ias C1 C2 C1 1 TL 1

27 MHz Amp ARF1505 RF 1 1 - 0 4

27 MHz Amp ARF1505 R F 11-04

C1, C7, C8, C11 .047mF 500V cerami disc C2, C12 Arco 465 75-380pF mica trimmer C3 2x 4700pF ATC 700B C4, C9-C10 8200pF 500V NPO ceramic C5 200pF ATC 100E C6 150pF ATC 700B L1 90nH 4t # 18 0.25"d .25"I L2 200nH - 3t # 8 1" dia 1"I L3 6μH - 22t # 24 enam 0.5"dia L4 500nH 2t on 850μ .5" bead R1-R3 1KΩ 1/4W TL1 .112" x 1" (50Ω) Stripline