ARF1500 MICROSEMI | Alldatasheet
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MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specifi ed. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Voltage 1 (ID(ON) = 30A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 30A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) MIN TYP MAX 500 6 7.5 100 1000 ±400 6 7.5 TBD 3 5 UNIT Volts μA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF1500 500 ±30 1500 -55 to 175 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientifi c, commercial, medical and industrial RF power generator and amplifi er applications up to 40 MHz.
- Specifi ed 125 Volt, 27.12 MHz Characteristics:
- Output Power = 750 Watts.
- Gain = 17dB (Class C)
- Effi ciency > 75%
- High Performance Power RF Package.
- Very High Breakdown for Improved Ruggedness.
- Low Thermal Resistance.
- Nitride Passivated Die for Improved Reliability. ARF1500 THERMAL CHARACTERISTICS Symbol RθJC RθJHS Characteristic (per package unless otherwise noted) Junction to Case Junction to Sink (Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.10 0.16 UNIT °C/W Volts DSS GSS ARF1500 BeO 1525-xx SS S SG D Microsemi Website - http://www.microsemi.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
- RoHS Compliant
Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz) Zin (Ω)Z OL (Ω) 2.0 13.5 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25Ω I DQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when in- haled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. Clamp Heat Sink D SS G SS D G SS SS ARF15-- BeO 1525-xx .005 .045 .250 .500 .500 1.065 .207 .207 .375 .105 typ. 1.065 D S G ARF1500 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 0 5 10 15 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 6.2V 2.2V 4.2V 8.2V 10.2V 0.02 0.04 0.06 0.08 0.10 0.12 10-5 10-4 10-3 10-2 10 1.0 -1 ZθJC, THERMAL IMPEDANCE (°C/W) 0.5 0.1 0.3 0.7 D = 0.9
0.05 SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 PDM Note: Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resis- tance between junctions and case mounting surface is 0.10°C/W. When installed, an additional thermal impedance of 0.06°C/W between the package base and the mounting surface is smooth and fl at. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages."
C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25"d .3"l L2 20 nH #20 hairpin loop .3" x .125" L3 175 nH - 4t #10 .625" dia .875" l L4 2uH - 22t #24 enam. .312" dia. L5 500nH 2t on 850u .5" bead R1 51 Ω .5W TL1 .25" x 1.75" (30 Ω) Stripline ARF1500
27.12 MHz Test Circuit
27 MHz Test Amp
1:1 pcb artwork