ARE6-8831-0JL00

ARE6-XXX1-0XX00 BROADCOM | Alldatasheet

Document overview

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Technical content

Features

 Available in peak wavelengths 855 nm and 945 nm  High radiant intensity  High radiant power  Low forward voltage  Typical viewing angle: 80° and 140°  Compatible with industrial reflow soldering process  MSL 1

Applications

 Light curtain  Infrared illumination for cameras  Surveillance systems  Machine vision systems  Eye tracking systems CAUTION! This device is ESD sensitive per the ANSI/ESDA/JEDEC JS-001 Standard. Observe appropriate precautions during handling and processing. Refer to Application Note AN-1142 for additional details. ARE6-xxx1-0xx00 High-Power Infrared Emitting Diodes

Broadcom ARE6-xxx1-0xx00-DS103 ARE6-xxx1-0xx00 Data Sheet High-Power Infrared Emitting Diodes Figure 1: Package Drawing NOTE: 1. All dimensions are in millimeters (mm). 2. Tolerance is ± 0.1 mm unless otherwise specified. Device Selection Guide (TJ = 25°C, IF = 1A) Viewing Angle 80° (ARE6-88xx, ARE6-98xx) Viewing Angle 140° (ARE6-8Exx, ARE6-9Exx) Part Number Peak Wavelength, peak (nm) Radiant Intensity, Ie (mW/sr)a, b a. The radiant intensity, I e, is measured at the mechanical axis of the package and it is tested with a single current pulse condition (tp = 10 ms). The actual peak of the spatial radiation pattern may not be aligned with the axis. b. Tolerance is ±15%. Radiant Flux, e (mW)c c. The radiant flux, e, is the total flux output as measured with an integrating sphere at a single current pulse condition (tp = 10 ms). Viewing Angle, 2θ½ (°)d d. θ½ is the off-axis angle where the radiant intensity is half of the peak intensity. Min. Max. Typ. Typ. ARE6-88C1-0GH00 855 400 630 860 80 ARE6-88D1-0GH00 855 400 630 860 80 ARE6-8831-0JL00 855 630 1250 1360 80 ARE6-8EC1-0DF00 855 200 400 860 140 ARE6-8ED1-0DF00 855 200 400 860 140 ARE6-8E31-0FH00 855 320 630 1360 140 ARE6-98D1-0FH00 945 320 630 650 80 ARE6-9831-0JL00 945 630 1250 1340 80 ARE6-9831-0JJ00 945 630 800 1340 80

Broadcom ARE6-xxx1-0xx00-DS103 ARE6-xxx1-0xx00 Data Sheet High-Power Infrared Emitting Diodes Absolute Maximum Ratings Optical and Electrical Characteristics (TJ = 25°C) Parameters ARE6-8xC1 ARE6-8xD1 ARE6-8x31 ARE6-98D1 ARE6-9831 Units DC Forward Currenta a. Derate linearly as shown in Figure 8, Figure 9, Figure 10, Figure 11, and Figure 12. 1000 2000 1500 1000 1500 mA Peak Forward Currentb, c b. Duty factor = 10%, frequency = 1 kHz. c. Solder point temperature, T S = 25°C. 3000 3000 3000 3000 3000 mA Power Dissipation 2000 4000 5025 2300 4725 mW Reverse Voltage Not designed for reverse bias operation LED Junction Temperature 145 145 145 145 145 °C Operating Temperature Range –40 to +120 –40 to +120 –40 to +120 –40 to +120 –40 to +120 °C Storage Temperature Range –40 to +120 –40 to +120 –40 to +120 –40 to +120 –40 to +120 °C Parameters Min. Typ. Max. Units Test Condition Forward Voltage, VF a a. Forward voltage tolerance is ± 0.1V. VI F = 1A ARE6-8xC1 1.50 1.70 2.00 ARE6-8xD1 1.40 1.65 2.00 ARE6-8x31 2.80 3.05 3.35 ARE6-98D1 1.60 1.90 2.30 ARE6-9831 2.70 2.95 3.15 Reverse Voltage, V R Not designed for reverse bias Thermal Resistance, RθJ-S b b. Thermal resistance from LED junction to solder point. — 8 — °C/W LED junction to solder point

Broadcom ARE6-xxx1-0xx00-DS103 ARE6-xxx1-0xx00 Data Sheet High-Power Infrared Emitting Diodes Part Numbering System Part Number Example ARE6-88D1-0GH00 Bin Information Intensity Bin Limits (CAT) Tolerance = ± 15%. ARE6 -x 1 x2 x3 1-0 x 4 x5 00 Code Description Option x1 Peak Wavelength 8 855nm 9 945nm x2 Viewing Angle 8 80° E 140° x3 Brightness Option C Single-junction normal brightness D Single-junction high brightness

3 Double-junction high brightness

x4 Minimum Radiant Intensity See Intensity Bin Limits (CAT) x5 Maximum Radiant Intensity See Intensity Bin Limits (CAT) x1: 8 – Peak wavelength 855 nm x2: 8 – Viewing angle typical 80° x3: D – Single junction high brightness x4: G – Minimum intensity bin G x5: H – Maximum intensity bin H Bin ID Radiant Intensity, Ie (mW/sr) Min. Max. D2 0 0 2 5 0 E2 5 0 3 2 0 F3 2 0 4 0 0 G4 0 0 5 0 0 H5 0 0 6 3 0 J6 3 0 8 0 0 K 800 1000 L 1000 1250

ARE6-xxx1-0xx00 Data Sheet High-Power Infrared Emitting Diodes Broadcom ARE6-xxx1-0xx00-DS103 Precautionary Notes Reflow Soldering  Do not perform reflow soldering more than twice. Observe necessary precautions of handling moisture-sensitive devices as stated in the following section.  Do not apply any pressure or force on the LED during reflow and after reflow when the LED is still hot. Figure 18: Recommended Lead-Free Reflow Soldering Profile Handling Precautions The encapsulation material of the LED is made of silicone for better product reliability. Compared to epoxy encapsulant, which is hard and brittle, silicone is softer and flexible. Observe special handling precautions during assembly of silicone encapsulated LED products. Failure to comply might lead to damage and premature failure of the LED. Refer to Broadcom Application Note AN5288, Silicone Encapsulation for LED: Advantages and Handling Precautions, for additional information.  Do not poke sharp objects into the silicone encapsulant. Sharp objects, such as tweezers or syringes, might apply excessive force or even pierce through the silicone and induce failures to the LED die or wire bond.  Do not touch the silicone encapsulant. Uncontrolled force acting on the silicone encapsulant might result in excessive stress on the wire bond. Hold the LED only by the body.  Do not stack assembled PCBs together. Use an appropriate rack to hold the PCBs.  The surface of silicone material attracts dust and dirt easier than epoxy due to its surface tackiness. To remove foreign particles on the surface of silicone, use a cotton bud with isopropyl alcohol (IPA). During cleaning, rub the surface gently without putting too much pressure on the silicone. Do not use ultrasonic cleaning. Application Precautions  The drive current of the LED must not exceed the maximum allowable limit across temperature as stated in the data sheet. Use constant current driving to ensure consistent performance.  Circuit design must cater to the whole range of forward voltage (V F) of the LEDs to ensure the intended drive current can always be achieved.  The LED exhibits slightly different characteristics at different drive currents, which may result in a larger variation of performance (such as intensity, wavelength, and forward voltage). Set the application current as close as possible to the test current to minimize these variations.  Do not use the LED in the vicinity of material with sulfur content or in environments of high gaseous sulfur compounds and corrosive elements. Examples of material that might contain sulfur are rubber gaskets, room-temperature vulcanizing (RTV) silicone rubber, rubber gloves, and so on. Prolonged exposure to such environments may affect the optical characteristics and product life.  Avoid rapid change in ambient temperatures, especially in high-humidity environments, because they cause condensation on the LED.  If the LED is intended to be used in a harsh or an outdoor environment, protect the LED against damages caused by rain water, water, dust, oil, corrosive gases, external mechanical stresses, and so on. 10 to 30 SEC. 6°C/SEC. MAX. 255 – 260°C 3°C/SEC. MAX. 217°C 200°C 150°C 3°C/SEC. MAX. 60 – 120 SEC. 100 SEC. MAX. TIME TEMPERATURE

ARE6-xxx1-0xx00 Data Sheet High-Power Infrared Emitting Diodes Broadcom ARE6-xxx1-0xx00-DS103 Thermal Management The optical, electrical, and reliability characteristics of the LED are affected by temperature. Keep the junction temperature (T J) of the LED below the allowable limit at all times. TJ can be calculated as follows: TJ = TA + RθJ-A × IF × VFmax where: TA = Ambient temperature (°C) RθJ-A = Thermal resistance from LED junction to ambient (°C/W) IF = Forward current (A) VFmax = Maximum forward voltage (V) The complication of using this formula lies in TA and RθJ-A. Actual TA is sometimes subjective and hard to determine. RθJ-A varies from system to system depending on design and is usually not known. Another way of calculating TJ is by using the solder point temperature, TS as follows: TJ = TS + RθJ-S × IF × VFmax where: TS = LED solder point temperature as shown in the following figure (°C) RθJ-S = Thermal resistance from junction to solder point (°C/W) IF = Forward current (A) VFmax = Maximum forward voltage (V) Figure 19: Solder Point Temperature on PCB TS can be easily measured by mounting a thermocouple on the soldering joint as shown in preceding figure, while RθJ-S is provided in the data sheet. Verify the TS of the LED in the final product to ensure that the LEDs are operating within all maximum ratings stated in the data sheet. Eye Safety Precautions LEDs may pose optical hazards when in operation. Do not look directly at operating LEDs because it might be harmful to the eyes. For safety reasons, use appropriate shielding or personal protective equipment.

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