ARB751V-40-HF COMCHIP | Alldatasheet
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Technical content
Features
-Low current rectifier. -Low voltage, low inductance. -For power supply. pF2CTCapacitance between terminals VR = 1V , f=1MHz Electrical Characteristics (At Ta=25°C, unless otherwise noted) ARB751V-40-HF Forward Current: 30mA Reverse Voltage: 30V RoHS Device Dimensions in inches and (millimeter) 0.071 (1.80) 0.063 (1.60) 0.055 (1.40) 0.047 (1.20) 0.108 (2.75) 0.100 (2.55) 0.039 (1.00) MAX. 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)REF 0.006 (0.15) 0.004 (0.10) 0.003 (0.08) Circuit Diagram SOD-323 0.000 (0.00) Marking Code: 5 SMD Schottky Barrier Diodes Halogen Free Parameter Unit Maximum Ratings (At Ta=25°C, unless otherwise noted) Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive peak forward surge current @ t=8.3ms Power dissipation Thermal resistance from junction to ambient Junction temperature Symbol VRM VR IO IFSM PD RθJA TJ 200 200 500 125 V V mA mA mW °C/W Storage temperature TSTG -40 ~ +150 °C AQW-JB008 Page 1 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. ARB751V-40-HF -Comply with AEC-Q101
RATING AND CHARACTERISTIC CURVES ( )ARB751V-40-HF SMD Schottky Barrier Diodes AQW-JB008 Page 2 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Power Dissipation, (mW) Ambient Temperature, (°C) Capacitance Between Terminals, (pF) Reverse Voltage, (V) 0 75 125 250 25 50 100 150 Fig.1 - Power Derating Curve 10 200 Fig.2 - Capacitance Characteristics 200 150 100 155 TJ=25°C f=1MHz Fig.3 - Forward Characteristics Forward Voltage, (V) Forward Current, (mA) 100 1.0 0.1 0.01 TJ=25°C TJ=100°C Fig.4 - Reverse Characteristics Reverse , (μA)Current Reverse Voltage, (V) 0 3010 20 255 15 100 1.0 0.1 0.001 0.01 TJ=25°C TJ=100°C
(mm) (inch) 2.142 ± 0.039 4.00 ± 0.10 178 ± 2.00 SYMBOL (mm) E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.10 0.138 ± 0.004 SOD-323 1.48 ± 0.05 0.058 ± 0.002 3.30 ± 0.05 0.130 ± 0.002 1.25 ± 0.05 0.049 ± 0.002 12.30 ± 1.00 0.484 ± 0.039 8.00 + 0.30 /–0.10 Reel Taping Specification o 120 D1 D2 D A SMD Schottky Barrier Diodes AQW-JB008 Page 3 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice.
3,000 REEL ( pcs ) Reel Size (inch) REEL PACK ▎= The marking bar indicates the cathode. SIZE (inch) 0.085 (mm) 2.15 0.70 0.70 0.028 0.028 B C A SOD-323 A B C Suggested PAD Layout 1.General tolerance: ±0.05mm. 2.The pad layout is for reference purposes only. Note: SMD Schottky Barrier Diodes AQW-JB008 Page 4 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. ARB751V-40-HF Solid dot “ ” = Halogen Free