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Technical content
Features
Secondary-side synchronous rectification Low Turn-OFF threshold at -4mV Wide operating temperature range from -40° C to +150° C Supports DCM, CCM, and QR (Quasi-Resonant) operating modes Built-in fault handling mechanism to provide high level of system stability: over-temperature (OTP) and over-voltage (OVP) protectionunder-voltage lock-out (UVLO) Light-load detection to reduce the standby power consumption Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. ”Green” Device (Note 3) Pin Assignments (Top View) TON TOFF/EN SFB NC VCC GND NC SYNC VD GND VD VDVDVS VS VS 11 12 VS VS VS VS VD VD VD NC V-DFN6040-22
Applications
Switched-mode power supply (SMPS) in consumer products (e.g. FPTV), web servers, and storage servers Power adapter and charger with either fixed or variable output voltage (e.g. USB Type-C, PD, fast charging, …) in notebook PCs, desktop PCs, All-In-One PCs, tablets, smartphones, and network clients Industrial and measuring equipment Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Figure 1. USB Type-C Charger with Secondary-side Regulation (SSR)
a voltage reference for the circuit inside the device. well as chip enable. The resistor, RTOFF/EN, shall be connected between this pin and GND. 3 SFB Secondary-side Feedback Output. It is connected to the internal resistor network for feedback purpose. 5-11 VS Embedded MOSFET Source Terminal Input. It shall be connected to GND. 12-17, VD Pad VD Embedded MOSFET Drain Terminal Input. It shall be connected as close as possible to the transformer. the embedded MOSFET of the primary-side, or to the drain terminal of the MOSFET of the primary-side. 22 VCC IC Supply Voltage Input. A ceramic capacitor of 10F shall be connected between this pin and GND. Figure 2. Internal Functional Block Diagrams of AR30N60
Document number:DS37287 Rev.2 - 2 4 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Absolute Maximum Ratings (@ TA = +25° C, unless otherwise specified.) (Note 4) Symbol Parameter Ratings Unit VCC Supply Voltage -0.3 to 10.0 V VDS Voltage Across Drain and Source -1 to 60 V VTOFF/EN, VTON Voltage on TOFF/EN, TON Pins -0.3 to 6.0 V TMJ Maximum Junction Temperature +150 °C TST Storage Temperature -65 to +150 °C ESD Human Body Model, JESD22-A114 3.0 KV Machine Model, JESD22-A115-A 0.25 Charged Device Model, JESD22-C101 1.0 Note: 4. These are stress ratings only. Operation outside the absolute maximum rat ings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability. Package Thermal Data (@ TA = +25° C, unless otherwise specified.) Symbol Parameter Rating Unit PD Power Dissipation (Note 5) 2.39 W θJA Thermal Resistance, Junction-to-Ambient (Note 6) 52.2 ° C/W θJC Thermal Resistance, Junction-to-Case (Note 7) 2.3 ° C/W Notes: 5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout. 6. Device mounted on 25mm x 25mm 2oz copper board. 7. Device mounted on 50mm x 50mm 2oz copper board. Recommended Operating Conditions Symbol Parameter Min Max Unit VCC Supply Voltage Range 3.5 9.0 V VDS Voltage across Drain and Source -0.6 60.0 FSW Switching Frequency 20 600 KHz RTON TON Resistor 5 125 KΩ RTOFF/EN TOFF/EN Resistor w/ SYNC 100 125 TJ Operating Junction Temperature -40 +125 °C
Document number:DS37287 Rev.2 - 2 5 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VAVDD Internal Regulator Output VCC = 5V – 4.5 – V ICC_START Supply Current (Under-voltage) VCC = 2.6V – 160 – µA ICC_STANDBY Supply Current (Disabled) VCC = 5V, RTOFF/EN = 0Ω – 380 500 ICC_ON Supply Current (Enabled) VCC = 5V, RTOFF/EN =100kΩ – 2.9 3.8 mA IEN START TOFF/EN Input Current, device during startup RTOFF/EN = 50KΩ -22 -20 -18 µA IEN_ON TOFF/EN Input Current, device enabled RTOFF/EN = 100KΩ -10.7 -10.0 -9.3 Under-voltage Lock-out (UVLO) UVLOTH VCC Under-voltage Lock-out Threshold Rising – 2.8 3.0 3.2 V UVLOHYS VCC Under-voltage Lock-out Threshold Hysteresis – – 200 – mV MOSFET Voltage Sensing VTHARM Arming Threshold VD to GND, Rising 1.3 1.5 1.7 V VTHON MOSFET Turn-ON Threshold (VD - VS) Falling, VS = GND = 0V -200 -130 -70 mV VTHOFF MOSFET Turn-OFF Threshold (VD - VS) Rising, VS = GND = 0V, VCC ≥ 4.2V – -4 – mV (VD - VS) Rising, VS = GND = 0V, 2.8V < VCC < 4.2V -30 -20 -10 mV TDON MOSFET Turn-ON Propagation Delay VTHON to 20% Level on Rising of VGS of Embedded MOSFET – 30 – ns TDOFF MOSFET Turn-OFF Propagation Delay VTHOFF to 80% Level on Falling of VGS of Embedded MOSFET – 30 – MOSFET Static Characteristics RDS(ON) Drain Source ON Resistance VCC = 5V, ID = 10A – 15 30 mΩ Minimum ON-time Minimum OFF-time TOFF Minimum OFF-time w/ SYNC RTOFF/EN = 100KΩ – 0.5 – µs RTOFF/EN = 125KΩ – 0.9 – VTOFF = 4V – 1.0 – Synchronization VTHSYNC SYNC Falling Threshold VAVDD - 2.4 VAVDD - 2.0 VAVDD - 1.6 V TSDLY SYNC Propagation Delay SYNC Falling 50% to MOSFET Turn-OFF – 40 70 ns RSYNC SYNC Pull-up Resistor to AVDD – 2.0 – KΩ Exception Handling TOTP Over-temperature – – +150 – °C TRECOVER Temperature to Recover from Over- temperature Exception – – +125 – Fault Detection Minimum ON-time Resistance Fault – – – 5 KΩ 150 – –
Document number:DS37287 Rev.2 - 2 8 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60
Application Information
The AR30N60 is a n Active/Synchronous Rectifier with embedded MOSFET . Together, with a primary -side controller of the ty pical flyback architecture, a compact AC/DC power conversion system with high efficiency can be built. The AR30N60 is applicable to both the PSR implementation where space is at a premium and the SSR implementation where the highest possible efficiency is often needed. Operating under the SSR mode, the AR30N60 provides the necessary feedback to the primary -side controller via the highly popular AS431 and the widely available opto-coupler. Innovative techniques like near-zero voltage detection are incorporated into the design to extend the ON time of the embedded MOSFET to maximize the power conversion efficiency. In addition, the AR30N60 also works in exact synchronization to the primary-side controller through the SYNC pin to mitigate the risk of shoot-through. If the output of the voltage differentiator (VDS = VD – VS) falls below the turn-OFF threshold (VTHOFF) of the embedded MOSFET within the minimum ON-time period (TON), the AR30N60 will transition into the Light -load Mode at the next cycle. When the load condition changes such that V DS ≈ VTHOFF, the AR30N60 reverts to its nominal mode of operation after the TON timer expires. Before the embedded MOSFET can be set, the voltage level of VDS must be greater than the arming threshold ( VTHARM) and the Minimum OFF- time (TOFF) timer must be reset. Once these conditions are met and the voltage internally sensed over the VD pin is 150mV lower than the VS pin, the embedded MOSFET is turned ON , and the TON timer starts decrementing. The embedded MOSFET will remain ON for at least the length of the TON period. This can only be over ridden when a negative pulse is detected over the SNYC pin. After the TON timer expires, the embedded MOSFET remains ON until VDS ≈ VTHOFF, at which point the embedded MOSFET is turned OFF. As iterated before, if the condition [VDS ≈ VTHOFF] becomes true before the TON timer expires, the AR30N60 will enter the Light-load Mode. Consequently, the embedded MOSFET shall stay OFF at the next cycle. When the drain voltage VD increases to 1.5V, the TOFF timer shall start decrementing, during which the embedded MOSFET is prevented from being turning ON. The SYNC pin is pulled -up internally through a 2KΩ resistor to the AVDD. It is nominally at 4.5V. The pin is typically driven by the primary -side controller to turn ON/OFF the embedded MOSFET. Once the voltage level at the SYNC pin falls by more than 2V, the embedded MOSFET inside the AR30N60 shall be turned OFF. Note that an external resistor should be used to limit the input current to less than 2mA. When the AR30N60 operates under CCM, shoot -through between the MOSFET on the primary -side and the embedded MOSFET on the secondary-side must be avoided. That is, one MOSFET must be turned OFF before the other one is going to be turned ON. In Figures1 & 2, the recommended connection for the SYNC pin is shown. Whenever the gate of primary -side controller pulls „ H‟, a pulse signal shall be transmitted via an RC filter to the SYNC pin as a “pull-down signal”. As a result, the embedded MOSFET is turned OFF before the MOSFET on the primary- side can be fully turned ON. To avoid the fault condition while the MOSFET on the primary-side is still ON, the TOFF timer shall start decrementing whenever the SYNC pin is “pulled down”. After the TOFF timer expires, the AR30N60 starts responding to the VDS signal at the next cycle. In summary, the SYNC pin shall always be terminated in the application circuit on the primary-side to ensure proper system operation. In addition, the protection and fault detection schemes like UVLO and OTP are incorporated in the AR30N60 to guarantee system reliability. Modes of Operation Sleep Mode The Sleep Mode is a low-power operating mode. Entry is triggered when the voltage level appearing at the TOFF/EN pin becomes lower than the VTOFF/EN threshold. Under the Sleep Mode, current consumed by the AR30N60 is close to ICC_STANDBY while the overall power consumption is down to 1mW or less. Upon entry into Sleep Mode, the embedded MOSFET along with the other blocks are turned OFF to minimize the power consumption. Once the voltage level at the TOFF/EN pin rises above the V EN_ON, the AR30N60 shall exit Sleep Mode and transition into the Light-Load Mode. This transition typically takes around 25μs during which the internal circuits are powered up in an orderly manner. Regardless of the mode at which the AR30N60 is operating , the AR30N60 can be forced into the Sleep Mode whenever the voltage level at the TOFF/EN pin drops to zero. The transition shall be immediate.
Document number:DS37287 Rev.2 - 2 9 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) Light-Load Mode When the inductor current on the secondary -side is small, the body-diode of the embedded MOSFET likely conducts for a time period much less than TON. As long as the conduction time is less than T ON, the embedded MOSFET shall stay OFF. The voltage across the body-diode, VDS, is being monitored continuously. If the body-diode conduction time is larger than TON, the AR30N60 shall transition into the Active Mode at the next cycle. Active Mode This is the normal operation mode under which the inductor current is large enough and the body-diode conduction time is larger than TON. During the ON time, VDS is masked from affecting the operating status of the embedded MOSFET. At the expiration of the TON timer, monitoring of the VDS resumes. As soon as VDS ≈ VTHOFF, the embedded MOSFET is turned OFF. At the next cycle, t he embedded MOSFET shall be turned ON if and only if: 1) the ON time of the embedded MOSFET in the previous cycle is larger than TON and 2) VDS < VTHON If the ON time of the embedded MOSFET at the last cycle becomes (for whatever reason), less than the TON, AR30N60 shall transition into the Light-load Mode at the next immediate cycle. In general, the embedded MOSFET alternates between the ON and OFF states in accordance to the values of the following parameters: VDS, TON, TOFF, voltage level at the SYNC pin. VTOFF/EN>1.4V VTOFF/EN<0.7V Sleep mode Light mode Pulse width >TON VTOFF/EN<0.7V Active mode VTOFF/EN<1.4V Pulse width <TON Pulse width <TON, VTOFF/EN >0.7V Pulse width >TON VTOFF/EN>0.7V Power on Figure 16 State Diagram Fault Detection and System Protection Over-temperature Protection When the temperature of the AR30N60 rises above T OTP, the output of the SFB pin shall be pulled up. As a result, the p rimary-side controller is informed of the abnormal condition via the typical opto-coupler. The primary-side controller typically responds by shutting down the whole operation. Note that the OTP protection mechanism has a built-in hysteresis of +25° C to minimize false triggering. UVLO Protection Whenever the voltage level at the VCC pin fall s below 2.8V (i.e. UVLOTH - UVLOHYS), the UVLO protection shall be invoked. The embedded MOSFET is then turned OFF. Once the voltage level at the VCC pin rises above the UVLOTH, the AR30N60 will return to the normal operation at the next cycle.
Document number:DS37287 Rev.2 - 2 10 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) Device Power-On When VCC < UVLOTH, the AR30N60 transitions into the Sleep Mode. At this time, the TOFF/EN pin is connected to ground through an internal resistor. When the VCC rises above UVLO TH, an internal current source starts to operate and eventually delivers 20µ A (IEN_START) to the external resistor, RTOFF/EN, which is connected to the TOFF/EN pin. Assuming a typical value of R TOFF/EN≥ 70KΩ, the V TOFF/EN eventually reaches 1.4V (V EN_ON) and above. Then, the AR30N60 shall exit the Sleep Mode and transition into the Light-load Mode. Thereafter, the internal current source shall reduce the output current to 10µ A (IEN_ON). ON Timer Setting The TON period is set by adding a resistor between the TON pin and ground. During typical operation, the OFF/ON of the embedded MOSFET is typically followed by successive oscillation in dec lining amplitude, i.e. ringing. This is caused by the parasitic existed on the printed circuit board. Activating the TON timer prevents the AR30N60 from responding to the ringing. Once the TON timer starts decrementing, the voltage level of VDS is ignored. After the TON timer expires, the value of VDS shall be checked continuously. Eventually, one of the following two situations shall become true: 1) If VDS ≥ VTHOFF, the embedded MOSFET is turned OFF. The AR30N60 shall enter the Light-load Mode at the next cycle. 2) If the voltage level of the VDS remains substantially lower than the VTHOFF, the embedded MOSFET shall remain ON. When VDS ≥ VTHOFF, the AR30N60 shall be turned OFF. If, for whatever reason, VDS remains lower than VTHOFF, the primary-side controller eventually shall turn OFF the AR30N60. Regardless, the AR30N60 will enter the Active Mode at the next cycle. TON (μS) = 0.028μS/KΩ x RTON + 0.1μS; where 0.24μS ≤ TON ≤ 4.3μS, 5KΩ ≤ RTON ≤ 125KΩ OFF Timer Setting In the typical applications of AR30N60 as illustrated in Figures 1 & 2, the SYNC pin is connected to the primary -side controller. The embedded MOSFET is turned OFF whenever one of the following conditions becomes true: 1) VDS ≈ VTHOFF 2) The voltage level at the SYNC pin is pulled low While the TOFF timer ensures that the embedded MOSFET stays OFF when the primary-side is conducting, the value of T OFF is set by an external resistor, RTOFF/EN. The value of RTOFF/EN can be calculated from the following equation, TOFF (µS) = [0.019µS/KΩ x RTOFF/EN (KΩ)] – 1.4µS; where 0.5μS ≤ TOFF ≤1.0μS, 100KΩ ≤ RTOFF/EN ≤ 125KΩ
Document number:DS37287 Rev.2 - 2 11 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) MOSFET Turn-ON/OFF Control Sequence DCM Operation with SYNC-pin Connected VDS of AR MOSFET PWM Signal on Primary-side VSYNC (AR) = VAVDD - 2VSYNC Gate of AR MOSFET OFF Timer ARM ON Timer VSYNC (2) (3) (4) (6) (1) (7)(5) Steps of Operation (1) At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current should flow through the embedded MOSFET (neither its body-diode). (2) When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON, the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON. (3) Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON. (4) Eventually, the current flowing through the embedded MOSFET falls to zero . Once VDS ≈ VTHOFF, the embedded MOSFET shall be turned OFF. (5) Because the ARM signal remains at the OFF state, the embedded MOSFET is kept at the OFF state even if VDS ≤ VTHON. That is, the value of VDS is ignored. (6) The primary-side controller starts conducting. This causes the signal at the input of the SYNC pin to be pulled down. As soon as the condition [VSYNC < (VAVDD – 2V)] becomes true, the TOFF timer starts decrementing. (7) After the TOFF timer expires, the AR30N60 starts to monitor the voltage level of VDS as soon as the ARM signal becomes „H‟.
Document number:DS37287 Rev.2 - 2 12 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Application Information (Cont.) CCM Operation with SYNC-pin Connected (2) (3) (4) (1) (5) PWM Signal In Primary-side Gate of AR MOSFET OFF Timer ARM ON Timer VDS of AR MOSFET SYNC VSYNC (AR) = VAVDD - 2VVSYNC Steps of Operation (1) At the logic „H‟ of the internal signal ARM, the voltage level of VDS shall be checked continuously. At this time, no current s hall flow through the embedded MOSFET (neither its body-diode). (2) When the primary-side controller stops conducting, the transfer of energy to the secondary-side commences. At this time, the current flowing through the body-diode of embedded MOSFET shall rise rapidly. When VDS ≤ VTHON (-130mV typical), the embedded MOSFET is turned ON, the TON timer starts decrementing, and the ARM signal is reset. Before the TON timer expires, the embedded MOSFET shall remain ON. (3) Now, the TON timer expires. If VDS is still lower than VTHOFF, the embedded MOSFET shall remain ON. (4) In contrast to the operation under DCM, the current flowing through the embedded MOSFET never falls to zero. As a result, the voltage level of VDS can never reach the VTHOFF (-4mV typical). Therefore, unlike in the case of the DCM operation, the embedded MOSFET shall remain ON until the primary -side controller starts conducting. To avoid any possibility of shoot -through, the embedded MOSFET is turned OFF as soon as the condition [VSYNC < (VAVDD – 2V)] becomes true. When the embedded MOSFET is turned OFF, the remaining energy starts to flow through the body-diode. This creates a voltage drop far smaller than V THON. Therefore, the TON timer is activated to prevent the embedded MOSFET from being turned ON. (5) After the TOFF timer expires, the level of the ARM signal shall be checked continuously. As soon as it goes „H‟, the voltage level of V DS is checked and step #1 repeats.
Document number:DS37287 Rev.2 - 2 13 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Ordering Information (Note 8) AR30N60PPA-13 PPA: V-DFN6040-22 -13: Reel Size Product Marking Reel Size (inches) Tape Width (mm) 13” Tape and Reel Quantity Part Number Suffix AR30N60PPA-13 AR30N60 13 12 3,000/Tape & Reel -13 Marking Information AR30N60 Logo Part No Date Code Pin 1 AR30N60 YYWW AR30N60 = Product Name YY: Year WW: Week 01~52; 52 represents 52 and 53 weeks Packing Package
Document number:DS37287 Rev.2 - 2 14 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 Package Outline Dimensions (All dimensions in mm.) Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN6040-22 V-DFN6040-22 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 BSC b 0.20 0.30 0.25 D 5.95 6.05 6.00 D2 3.82 4.02 3.92 D2a 1.10 1.30 1.20 E 3.95 4.05 4.00 E2 2.44 2.64 2.54 e 0.50 BSC L 0.35 0.45 0.40 z 0.375 TYP All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN6040-22 Dimensions Value (in mm) C 0.500 G 0.150 G1 0.200 X 0.350 X1 2.850 X2 1.330 X3 4.050 X4 5.350 X5 5.660 Y 0.650 Y1 2.700 Y2 4.400 A A1 A3 Seating Plane D z b e L E2E D2a PIN#1 I.D. C0.3 Y2Y1 Y C X1X G C-0.3*45°
Document number:DS37287 Rev.2 - 2 15 of 15 www.diodes.com February 2016 © Diodes Incorporated AR30N60 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internatio nal or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple langu ages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cus tomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety -critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com