AQHVXX-01ETG LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

  • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
  • EFT , IEC 61000-4-4, 40A (5/50ns)
  • Lightning, 8A (8/20 as defined in IEC 61000-4-5 2nd edition) for AQHV12
  • Low clamping voltage
  • PPAP capable
  • Low leakage current
  • Small SOD882 packaging helps save board space
  • AEC-Q101 qualified
  • Moisture Sensitivity Level(MSL -1)
  • Halogen free, lead free and RoHS compliant
  • LED Lighting Modules
  • Portable Instrumentation
  • General Purpose I/O
  • RS232 / RS485
  • CAN and LIN Bus
  • Automotive application RoHS Pb GREENAQHVxx-01ETG series 200W Unidirectional TVS Diode Pinout Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.

General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 200 W TOP Operating Temperature -40 to 150 °C TSTOR Storage Temperature -55 to 150 °C Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 12.0 V Breakdown Voltage VBR IR=1mA 13.3 V Leakage Current ILEAK VR=12V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 19.0 V IPP=8A, tP=8/20μs, Fwd 25.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.37 Ω Peak Pulse Current Ipp tp=8/20µs 8.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CD-GND Reverse Bias=0V , f=1MHz 60 pF Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 15.0 V Breakdown Voltage VBR IR=1mA 16.7 V Leakage Current ILEAK VR=15V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 22.0 V IPP=5A, tp=8/20µs, Fwd 28.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.40 Ω Peak Pulse Current Ipp tp=8/20µs 5.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 46 pF

General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 24.0 V Breakdown Voltage VBR IR=1mA 26.7 V Leakage Current ILEAK VR=24V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 36.0 V IPP=3A, tp=8/20µs, Fwd 50.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.56 Ω Peak Pulse Current Ipp tp=8/20µs 3.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±24 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 32 pF Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 36.0 V Breakdown Voltage VBR IR=1mA 40.0 V Leakage Current ILEAK VR=36V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 52.0 V IPP=2A, tp=8/20µs, Fwd 60.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 1 .28 Ω Peak Pulse Current Ipp tp=8/20µs 2.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±15 kV IEC 61000-4-2 (Air Discharge) ±20 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 25 pF Non-Repetitive Peak Pulse Power vs. Pulse Time Pulse Duration - tp (µs) Peak Pulse Power - Ppk (kW) 0.01 0.1 0.11 10 100 1000 Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA (oC) % of Rated Power I PP Note: 1 Parameter is guaranteed by design and/or component characterization.

2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns

General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 8/20μs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP 05 10 15 20 25 TLP Voltage (V) TLP Current (A) AQHV12 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 TLP Voltage (V) TLP Current (A) AQHV15 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 35 40 45 TLP Voltage (V) TLP Current (A) AQHV24 T ransmission Line Pulsing(TLP) Plot 01 02 03 04 05 06 07 08 09 0 100 TLP Voltage (V) TLP Current (A) AQHV36 T ransmission Line Pulsing(TLP) Plot

General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters

Ordering Information

Part Number Package Min. Order Qty. AQHV12-01ETG SOD882 10000 AQHV15-01ETG AQHV24-01ETG AQHV36-01ETG Part Numbering System Part Marking System AQHV ** 01 T G Voltage Number of Channels Package T= Tape & Reel G= Green TVS Diode Arrays (SPA® Automotive Grade Diodes) E: SOD882 E –C Bidirectional 2: SPHV12 5: SPHV15 4: SPHV24 6: SPHV36 2: AQHV12 5: AQHV15 4: AQHV24 6: AQHV36 Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Substrate material Silicon Body Material Molded Compound Flammability UL Recognized compound meeting flammability rating V-0

General Purpose ESD Protection - AQHVxx-01ETG series TVS Diode Array (SPA® Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/15/18 Embossed Carrier T ape & Reel Specification Feeding Direction Top mark and pin 1 direction in Tape and Reel UX Symbol Millimeters A 0.70+/-0.045 B 1 .10+/-0.045 C 0.65+/-0.045 d 1 .55+/-0.10 E 1 .75+/-0.05 F 3.50+/-0.05 P 2.00+/-0.10 P0 4.00+/-0.10 P1 2.00+/-0.10 Cathode by marking Recommended Soldering Pad Layout 0.325 0.325 0.650 0.975 0.650 Symbol JEDEC MO-236 Millimeters Inches Min Typ Max Min Typ Max D 0.45 0.018 ,Ref. ,Ref. ,Ref. 8mm TAPE AND REEL Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.