AQ12-02HTG

AQXX-02HTG UMW | Alldatasheet

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Technical content

Features

ESD, ±30kV contact, ±30kV air EFT , IEC 61000-4-4, 50A (5/50ns) Lightning, 33A (8/20μs as defined in IEC 61000-4-5 2nd edition) for the AQ05 Working voltages: 5V ,12V , 15V , 24V and 36V ESD, ISO 10605, 330pF 330Ω, ±30kV contact, ±30kV air Low clamping voltage Low leakage current Moisture Sensitivity Level (MSL -1) Halogen free, lead free and RoHS compliant PPAP capable Industrial Equipment Test and Medical Equipment Point-of-Sale Terminals Motor Controls Legacy Ports Security and Alarm Systems UMW R www.umw-ic.com 1 UTD Semiconductor Co.,Limited AQxx-02HTG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units PPk Peak Pulse Power (tp=8/20μs) 500 W TOP Operating Temperature -40 to 150 °C TSTOR Storage Temperature -55 to 150 °C (TOP=25º Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR=1μA 5.0 V Breakdown Voltage VBR IR=1mA 6.0 7. 0 V Reverse Leakage Current ILEAK VR=5V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 8.0 9.8 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 10.5 13.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, Pin 1 or Pin 2 to Pin 3 0.19 Ω Peak Pulse Current IPP tp=8/20µs 33 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 290 350 pF CI/O-I/O Reverse Bias=0V , f=1MHz 145 180 pF Reverse Standoff Voltage VRWM IR=1μA 12.0 V Breakdown Voltage VBR IR=1mA 13.3 14.2 V Reverse Leakage Current ILEAK VR=12V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 16.0 18.5 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 20.0 22.5 V Dynamic Resistance2 RDYN TLP , tp=100ns, Pin 1 or Pin 2 to Pin 3 0.25 Ω Peak Pulse Current IPP tp=8/20µs 20 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 110 135 pF CI/O-I/O Reverse Bias=0V , f=1MHz 55 85 pF www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R AQxx-02HTG Parameter Symbol T est Conditions Min Ty p Max Units

Parameter Symbol T est Conditions Min Ty p Max Units Reverse Standoff Voltage VRWM IR=1μA 15.0 V Breakdown Voltage VBR IR=1mA 16.7 18.5 V Reverse Leakage Current ILEAK VR=15V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 20.5 24.0 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 26.6 30.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, Pin 1 or Pin 2 to Pin 3 0.30 Ω Peak Pulse Current IPP tp=8/20µs 15 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 85 100 pF CI/O-I/O Reverse Bias=0V , f=1MHz 45 75 pF Reverse Standoff Voltage VRWM IR=1μA 24.0 V Breakdown Voltage VBR IR=1mA 26.7 28 V Reverse Leakage Current ILEAK VR=24V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 30.0 36.0 V IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 36.0 42.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, Pin 1 or Pin 2 to Pin 3 0.50 Ω Peak Pulse Current IPP tp=8/20µs 9 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 60 65 pF CI/O-I/O Reverse Bias=0V , f=1MHz 30 50 pF Reverse Standoff Voltage VRWM IR=1μA 36.0 V Breakdown Voltage VBR IR=1mA 40.0 41 .8 V Reverse Leakage Current ILEAK VR=36V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 45.0 52.0 V IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 58.5 62.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, Pin 1 or Pin 2 to Pin 3 0.65 Ω Peak Pulse Current IPP tp=8/20µs 7 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 45 50 pF CI/O-I/O Reverse Bias=0V , f=1MHz 25 40 pF Note: 1 Parameter is guaranteed by design and/or component characterization.

2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns

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8/20μs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP Capacitance vs. Reverse Bias (Pin1 or Pin2 to Pin3) SD36CSD24C AQ36 100 150 200 250 300 Capacitance (pF) Reverse Bias (V) AQ05 AQ12 AQ15 AQ24 02468 10 12 TLP Voltage (V) TLP Current (A) AQ05 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 TLP Voltage (V) TLP Current (A) AQ12 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 TLP Voltage (V) TLP Current (A) AQ15 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 35 40 TLP Voltage (V) TLP Current (A) AQ24 T ransmission Line Pulsing(TLP) Plot www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R AQxx-02HTG

05 10 15 20 25 30 35 40 45 50 55 TLP Voltage (V) TLP Current (A) AQ36 T ransmission Line Pulsing(TLP) Plot Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA (oC) % of Rated Power I PP www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R AQxx-02HTG

Soldering Parameters Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Substrate Material Silicon Body Material Molded Compound Flammability UL Recognized compound meeting flammability rating V-0 Reflow Condition Pb – Free assembly Pre Heat - T emperature Min (Ts(min)) 150°C - T emperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) T emp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - T emperature (TL) (Liquidus) 217°C - T emperature (tL) 60 – 150 seconds Peak T emperature (TP) 260+0/-5 °C Time within 5°C of actual peak T emperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak T emperature (TP) 8 minutes Max. Do not exceed 260°C www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW R AQxx-02HTG

0.60 1.300.80 Recommended soldering pad layout (unit :mm) Drawing# : H01-B 1.30 2.50 2.90 D E e b x 3 A Pin1 Top View Bottom View Side View Detail A Detail A L L L1 (gauge plane) θ Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking

Ordering information

Ordercode Package Baseqty Deliverymode SOT-23 3000 Tape and reel UMW AQ05-02HTG www.umw-ic.com 7 UTD Semiconductor Co.,Limited UMW R AQxx-02HTG UMW AQ12-02HTG UMW AQ15-02HTG UMW AQ24-02HTG UWM AQ36-02HTG SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel