APZT2222A-HF COMCHIP | Alldatasheet

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Technical content

Features

  • Epitaxial planar die construction. - Ideal for low power amplification and switching. - AEC-Q101 Qualified. SOT-223 1 2 3 0.256(6.50) 0.240(6.10) 0.122(3.10) 0.114(2.90) 0.146(3.70) 0.130(3.30) 0.026(0.66) 0.004(0.10) 0.001(0.02) 0.067(1.70) 0.059(1.50) 0.287(7.30) 0.264(6.70) 0.045(1.15) Dimensions in inches and (millimeter) 0.016(0.40) 0.008(0.20) 0.035(0.90) 0.087(2.20) Circuit Diagram Base

3 Emitter

Collector2,4 Mechanical data - Case: SOT-223, molded plastic. - Molding compound: UL flammability classification rating 94V-0. - Terminals: Tin-plated, solderability per MIL-STD-202, method 208. Maximum Ratings (at Ta=25°C unless otherwise noted) UnitsSymbolParameter Value VCBO VCEO VEBO IC PD RθJA TSTG 0.6 1.15 108 -55 to +150 V V V A W °C/W Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current (continuous) Power dissipation (collector) (Note 1) Thermal resistance, junction to ambient Storage temperature range -55 to +150 °C Collector current-peak pulse width ≤ 40µs, δ = 0.35 ICM 1.5 A TJJunction temperature range Note: 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm².

Comchip Technology CO., LTD. REV:A General Purpose Transistor Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 VCB = 60V, IE = 0 Min. Max. V V V nA DC current gain hFEVCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA 50 Collector-emitter saturation voltage VCE(sat)IC = 150mA, IB = 15mA 0.3 V Base-emitter saturation voltage VBE(sat)IC = 150mA, IB = 15mA 1.2 V Transition frequency fT IC = 20mA, VCE = 20V, f = 100MHz 300 MHz Parameter VEB = 3V, IC = 0 hFE VCE = 10V, IC = 10mA 75hFE AQW-JTR75 Collector cut-off current IEBO 10VCB = 60V, VEB(OFF) = -3V ICEX Base cut-off current nA nA Output capacitance COBO CIBOInput capacitance ns ns Delay time Fall time Rise time Storage time td tf tr ts 225 VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA VCC = 30V, IC = 150mA, IB1 = 15mA VCB = 10V, IE = 0, f = 1MHz IC = 0, VEB = 0.5V, f = 1MHz pF pF 300 VCE(sat) VBE(sat) 100hFE hFE VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA

Comchip Technology CO., LTD. REV:A General Purpose Transistor Rating and Characteristic Curves (APZT2222A-HF) Fig.1 - hFE ― IC 1 10 100 100 1000 1000 Fig.2 - VCE(sat) ― IC Collector Current, IC (mA) 400 500 100 DC Current Gain, hFE 200 AQW-JTR75 Fig.3 - VBE(sat) ― IC 1 10 100 0.11000 Fig.4 - VBE(ON) ― IC Collector Current, IC (mA) 1000 Collector Current, IC (mA) Collector-Emitter Saturation Voltage, VCE(sat) (mV) 300 1 10 100 1000 1200 800 200 400 600 1 10 100 10000.1 Collector Current, IC (mA) Base-Emitter On Voltage, VBE(ON) (mV) Base-Emitter Saturation Voltage, VBE(sat) (mV) VCE= 10V TA=125°C TA=25°C TA= -55°C IC/IB= 10 TA=125°C TA=25°C TA= -55°C TA= -55°C TA=25°C TA=125°C VCE= 10V 1000 1200 800 200 400 600 IC/IB= 10 TA= -55°C TA=25°C TA=125°C

Comchip Technology CO., LTD. REV:A General Purpose Transistor Reel Taping Specification A B d C E F P P0 P1 W First 25pcs Empty Last 50pcs Empty Leader TapeTrailer Tape Components (mm) (inch) SOT-223 SYMBOL (inch) SOT-223 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 DD1D2 120° T T 0.25 ± 0.05 0.010 ± 0.002 AQW-JTR75

Comchip Technology CO., LTD. REV:A General Purpose Transistor Part Number Marking Code Marking Code Standard Packaging Case Type 4,000 REEL ( pcs ) Reel Size (inch) REEL PACK SOT-223 APZT2222A-HF 1P XXX = Control code G XXX DG B A C F E Suggested P.C.B. PAD Layout SIZE (inch) 0.030 (mm) 0.75 1.60 2.30 0.063 0.091 4.55 0.179 A B C D 0.1343.40 6.15 7.75 0.242 0.305 E F G SOT-223 AQW-JTR75