APTRG8A120 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Drive IGBTs up to I C=300A, VCE=1200V
  • Short circuit protection by VCEsat monitoring
  • Low speed overcurrent cut off to limit over voltage
  • Under voltage Lockout with hysteresis
  • Top Bottom input signals Interlock
  • Switching frequency up to 50 kHz
  • Low stray inductance
  • High level of integration
  • Isolated driver Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Rugged
  • Stable temperature behavior
  • Very hi gh noise immuni ty (common mode rejection > 10kV/µs)
  • 2500V Galvanic Isolation primary/secondary
  • 5V logic level with Schmitt-trigger Input
  • Single VDD=15V supply required
  • Positive & Negative Secondary auxiliary power supplies internally generated
  • Separate sink & Source output for easy Gate drive (optimized turn on & turn off operation)
  • Mounting with screws for good vibration withstand
  • Solderable pins

APTRG8A120 – Rev 1 August, 2006 www.microsemi.com 2 - 4 Go ff1 Go n1 0V1 VC2 -V1 Go n2 Go ff2 FAU LT Memorisation -V2 1nF 2.7K 5.1V +5V GND +5V FA ULT Me moris ati on 1nF 1nF GND 5.1V GN D 5.1V GN D SHORT CIRCUIT PROTECT VCEsat 0V2 SHORT CIRCUIT PROTECT VCEsat 0V1 0V1 1nF 5.1V GND 0V2 0V2 CIRCUIT LOGIC And INTERLOCK DRIVE V2 ISOLATED DC /DC CONVERTERS PWM GENERATOR TOP DRIVER BOTTOM DRIVER SOFT TURN OFF An d UVL O SOFT TURN OFF An d UVL O BUFFER BUFFER 0/15V +15V GND 15V AUX. SUPPLY (1A) 47MF FAULT OUT RESET IN 2 IN 1 BUFFER BUFFER +5V DUAL DRIVER CIRCUIT HI GH POWER IGBT 0VBUS 2R 5W 0.5R 5W 1R 10W +VBUSVC1 HI GH POWER IGBT OUT 0VBUS 0. 5R5W 1R 10W 2R 5W fig 1:Typical phase leg Operation Block Diagram All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings Symbol Parameter Max ratings Unit VDD Supply Voltage 16 VHi Input signal voltage i=1, 2 5.5 V VHi = 0V, i =1, 2 0.3 IV DDm ax Maximum Supply current VDD=15V, Fout = 25 kHz, Ceff=150nF 1 A fma x Maxi mum Switching Frequency @ T am b=85°C 50 kHz VC Collector Voltage short circuit protection pin 1200 V IoutAV m ax Output Average Current Per Output 270 mA RG onm in Minimum resistance for RGon 2 RGo ff min Minimum resistance for RGoff 1 Ω Pout Output Power DC/DC converter Per Output 4 W

APTRG8A120 – Rev 1 August, 2006 www.microsemi.com 3 - 4 Driver Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VDD Operating Supply Voltage 14.5 15 15.5 V IVD D Operating Supply Current Fout=25kHz,VDD=15V,VBus=600V Ceff=150nF on Channel 1&2 0.75 A VUVLO Under Voltage lockout threshold 11.6 12.3 13.5 V VHi(ma x) Maximum Input Voltage -0.5 5 5.5 VHi(th+) Positive Going Threshold Voltage 2 VHi(th-) Negative Going Threshold Voltage 0.8 V CHi Input Capacitance * 1 nF RHi Input Resistance * i = 1, 2 1 k Ω No Load 14 15 16 VG(on) Turn on Gate Voltage Output RGon=2Ω, Fout = 25kHz, Ceff =150nF 14 No Load -7 -6 -5 VG(off) Turn off Gate Voltage Output RGo ff=1Ω, Fout = 25kHz, Ceff =150nF -5 V Td(on) Turn On delay time C eff = 150nF X 200 400 500 Td(off) Turn Off delay time C eff = 150nF X 220 420 520 ns PWD Pulse Width Distortion -0.3 0.02 0.3 PDD Propagation Delay Difference between any two driver Td(on) - Td(off) -0.35 0.35 µs Ifault Output fault current Fault condition 7 mA VfaultH High Output Fault Voltage No fault 5 VfaultL Low Output Fault Voltage Fault condition 0.5 V Tdfault Desat Fault Output Delay Time V DD=15V 5 µs TSC Total Short Circuit Duration 6 µs ISC Short Circuit Current Tsc=6µs, VBus=600V, VGE=15V 950 A CPS Coupling Capacitance Primary Secondary 20 pF RPW Reset Pulse Width Logic high for reset 20 µs RR Reset Input Resistance 1 FR Fault output pull-up resistance 2.7 kΩ * Low impedance guarantees good noise immunity. X Dead time between top and bottom inputs signals must be generated externally in case of phase leg operation Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL Primary to Secondary Isolation 2500 V TOP Operating Ambient Temperature -40 85 TSTG Storage Temperature Range -55 100 °C Torque Mounting torque M3 0.5 N.m Wt Package Weight 120 g

APTRG8A120 – Rev 1 August, 2006 www.microsemi.com 4 - 4 Driver Package outline (dimensions in mm) Goff 2 Gon 2 VC 1 0V 2 VC 2 Gon 1 0V 1 Goff 1 GND FAULT OUT RESET 0/15V +15V Frequency vs Gate effective Capacitor Tamb=25°C Tamb=70°C 100 110 0 25 50 75 100 125 150 175 200 225 250 275 300 CEFF (nF) FRQ (Khz) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.