APTM20DAM04G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7 ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile
  • RoHS Compliant Boost chopper MOSFET Power Module

APTM20DAM04G – Rev 2 July, 2006 www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 186A 4 5 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 10mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 28.9 Coss Output Capacitance 9.32 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.58 nF Qg Total gate Charge 560 Qgs Gate – Source Charge 212 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 372A 268 nC Td(on) Turn-on Delay Ti me 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A RG = 1.2Ω 116 ns Eon Turn-on Switching Energy 3396 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3716 µJ Eon Turn-on Switching Energy 3744 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3944 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 750 µA IF DC Forward Current T c = 80°C 300 A IF = 300A 1 1.1 IF = 600A 1.4 VF Diode Forward Voltage IF = 300A T j = 125°C 0.9 V Tj = 25°C 60 trr Reverse Recovery Time Tj = 125°C 110 ns Tj = 25°C 600 Qrr Reverse Recovery Charge IF = 300A VR = 133V di/dt = 600A/µs Tj = 125°C 2520 nC

APTM20DAM04G – Rev 2 July, 2006 www.microsemi.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.1 RthJC Junction to Case Thermal Resistance Diode 0.2 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTM20DAM04G – Rev 2 July, 2006 www.microsemi.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 6.5V 7.5V 8.5V 10V VGS=15V 500 1000 1500 2000 2500 3000 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 1000 1200 0123456789 1 0 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 100 200 300 400 500 600 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 186A 100 150 200 250 300 350 400 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM20DAM04G – Rev 2 July, 2006 www.microsemi.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 186A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1000 10000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse T J=150°C TC=25°C limited by RDSon Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=40V VDS=100V VDS=160V 0 80 160 240 320 400 480 560 640 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=372A TJ=25°C

APTM20DAM04G – Rev 2 July, 2006 www.microsemi.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 0 100 200 300 400 500 600 I D, Drain Current (A) td(on) and td(off) (ns) VDS=133V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 100 200 300 400 500 600 I D, Drain Current (A) tr and tf (ns) VDS=133V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff Eoff 0 100 200 300 400 500 600 I D, Drain Current (A) Eon and Eoff (mJ) VDS=133V RG=1.2Ω TJ=125°C L=100µH Eon Eoff 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=133V ID=372A TJ=125°C L=100µH Hard switching ZCS ZVS 100 150 200 250 300 350 50 100 150 200 250 300 350 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=133V D=50% RG=1.2Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.