APTM20AM10FT ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile Phase leg MOSFET Power Module

APTM20AM10FT – Rev 2 July, 2005 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T j = 125°C 1500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 87.5A 10 12 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 5mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 13.7 Coss Output Capacitance 4.36 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.19 nF Qg Total gate Charge 224 Qgs Gate – Source Charge 86 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 150A 94 nC Td(on) Turn-on Delay Ti me 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5Ω 99 ns Eon Turn-on Switching Energy 926 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 910 µJ Eon Turn-on Switching Energy 1216 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1062 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 175 IS Continuous Source current (Body diode) Tc = 80°C 131 A VSD Diode Forward Voltage V GS = 0V, IS = - 150A 1.3 V dv/dt Peak Diode Recovery X 8 V/ns Tj = 25°C 220 trr Reverse Recovery Time Tj = 125°C 420 ns Tj = 25°C 2.14 Qrr Reverse Recovery Charge IS = - 150A VR = 133V diS/dt = 200A/µs Tj = 125°C 5.8 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 150A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM20AM10FT – Rev 2 July, 2005 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.18 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 1.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp T: Thermistor temperature RT: Thermistor value at T

APTM20AM10FT – Rev 2 July, 2005 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 7.5V 100 200 300 400 500 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 23456789 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 1.15 1.2 0 40 80 120 160 200 240 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 87.5A 100 120 140 160 180 200 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM20AM10FT – Rev 2 July, 2005 APT website – http://www.advancedpower.com 5 – 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 87.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area DC line 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=40V VDS=100V VDS=160V 0 50 100 150 200 250 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=150A TJ=25°C

APTM20AM10FT – Rev 2 July, 2005 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 0 50 100 150 200 250 300 ID, Drain Current (A) td(on) and td(off) (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 50 100 150 200 250 300 ID, Drain Current (A) tr and tf (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 0 50 100 150 200 250 300 ID, Drain Current (A) Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 1.5 2.5 0 5 10 15 20 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=133V ID=150A TJ=125°C L=100µH 100 150 200 250 300 350 20 40 60 80 100 120 140 160 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=133V D=50% RG=2.5Ω TJ=125°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.