APTM20AM08FTG MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Phase leg MOSFET Power Module

APTM20AM08FTG – Rev 2 July, 2006 www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T j = 125°C 1500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 104A 8 10 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 5mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 14.4 Coss Output Capacitance 4.66 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.29 nF Qg Total gate Charge 280 Qgs Gate – Source Charge 106 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 208A 134 nC Td(on) Turn-on Delay Ti me 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5Ω 116 ns Eon Turn-on Switching Energy 1698 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1858 µJ Eon Turn-on Switching Energy 1872 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1972 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 208 IS Continuous Source current (Body diode) Tc = 80°C 155 A VSD Diode Forward Voltage V GS = 0V, IS = - 208A 1.3 V dv/dt Peak Diode Recovery X 5 V/ns Tj = 25°C 230 trr Reverse Recovery Time Tj = 125°C 450 ns Tj = 25°C 1.8 Qrr Reverse Recovery Charge IS = - 208A VR = 133V diS/dt = 200A/µs Tj = 125°C 6.8 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM20AM08FTG – Rev 2 July, 2006 www.microsemi.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 0.16 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp ALL DIMENSIONS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com T: Thermistor temperature R T: Thermistor value at T

APTM20AM08FTG – Rev 2 July, 2006 www.microsemi.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 6.5V 7.5V 8.5V 10V VGS=15V 200 400 600 800 1000 1200 1400 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 0123456789 1 0 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 50 100 150 200 250 300 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 104A 100 150 200 250 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM20AM08FTG – Rev 2 July, 2006 www.microsemi.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 104A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A)Single pulse T J=150°C TC=25°C limited by RDS on Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=40V VDS=100V VDS=160V 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=208A TJ=25°C

APTM20AM08FTG – Rev 2 July, 2006 www.microsemi.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 0 50 100 150 200 250 300 350 I D, Drain Current (A) td(on) and td(off) (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 50 100 150 200 250 300 350 I D, Drain Current (A) tr and tf (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff Eoff 0 50 100 150 200 250 300 350 ID, Drain Current (A) Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=133V ID=208A TJ=125°C L=100µH Hard switching ZCS ZVS 100 150 200 250 300 350 25 50 75 100 125 150 175 200 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=133V D=50% RG=2.5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.