APTM20AM08FT ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32Power MOS 7® FREDFETs - Low R DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged /g183/g32Kelvin source for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal for easy PCB mounting /g183/g32Low profile Phase leg MOSFET Power Module

APTM20AM08FT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 375µA 200 V VGS = 0V,VDS = 200V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T j = 125°C 1500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 104A 8 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14.4 Coss Output Capacitance 4.66 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.29 nF Qg Total gate Charge 280 Qgs Gate – Source Charge 106 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 208A 134 nC Td(on) Turn-on Delay Time 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5/g87 116 ns Eon Turn-on Switching Energy /g117 1698 Eoff Turn-off Switching Energy /g118 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1858 µJ Eon Turn-on Switching Energy /g117 1872 Eoff Turn-off Switching Energy /g118 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1972 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 208 IS Continuous Source current (Body diode) Tc = 80°C 155 A VSD Diode Forward Voltage V GS = 0V, IS = - 208A 1.3 V dv/dt Peak Diode Recovery /g119 5 V/ns Tj = 25°C 230 trr Reverse Recovery Time IS = - 208A VR = 133V diS/dt = 200A/µs Tj = 125°C 450 ns Tj = 25°C 1.8 Qrr Reverse Recovery Charge IS = - 208A VR = 133V diS/dt = 200A/µs Tj = 125°C 6.8 µC /g117 Eon includes diode reverse recovery. /g118 In accordance with JEDEC standard JESD24-1. /g119 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS /g163 - 208A di/dt /g163 700A/µs VR /g163 VDSS Tj /g163 150°C

APTM20AM08FT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.16 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RRT 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTM20AM08FT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 6.5V 7.5V 8.5V 10V VGS=15V 100 200 300 400 500 600 700 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 0123456789 1 0 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 50 100 150 200 250 300 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 104A 100 150 200 250 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM20AM08FT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 104A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse TJ=150°C limited by RDSon Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=40V VDS=100V VDS=160V 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=208A TJ=25°C

APTM20AM08FT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 0 50 100 150 200 250 300 350 I D, Drain Current (A) td(on) and td(off) (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 50 100 150 200 250 300 350 I D, Drain Current (A) tr and tf (ns) VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 50 100 150 200 250 300 350 I D, Drain Current (A) Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=133V ID=208A TJ=125°C L=100µH 100 150 200 250 300 25 50 75 100 125 150 175 200 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=133V D=50% RG=2.5Ω TJ=125°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.