APTM20AM05FT ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Power MOS V ® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
- Kelvin source for easy drive
- Kelvin Drain for VDS monitoring
- Very low stray inductance - Symmetrical design - M5 power connectors
- Internal thermistor for temperature monitoring
- High level of integration Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals for signal and M5 for power for easy PCB mounting Phase leg MOSFET Power Module
APTM20AM05FT – Rev 0 June, 2003 APT website – http://www.advancedpower.com 2 - 3 Electrical Characteristics All ratings @ T j = 25°C unless otherwise specified Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 200 V VGS = 0V,VDS = 200V Tj = 25°C 1000 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 166.5A 5 mW VGS(th) Gate Threshold Voltage VGS = VDS, ID = 8mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±250 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 40.8 Coss Output Capacitance 9.1 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 3.1 nF Qg Total gate Charge 1184 Qgs Gate – Source Charge 376 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 333A 600 nC Td(on) Turn-on Delay Time 15 Tr Rise Time 25 Td(off) Turn-off Delay Time 50 Tf Fall Time Resistive Switching VGS = 15V VBus = 100V ID = 333A RG = 0.22 W 10 ns Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 333 IS Continuous Source current (Body diode) Tc = 80°C 249 A VSD Diode Forward Voltage VGS = 0V, IS = - 333A 1.3 V dv/dt Peak Diode Recovery 8 V/ns Tj = 25°C 240 trr Reverse Recovery Time IS = - 333A VR = 100V diS/dt = 800A/µs Tj = 125°C 420 ns Tj = 25°C 8 Qrr Reverse Recovery Charge IS = - 333A VR = 100V diS/dt = 800A/µs Tj = 125°C 16 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 333A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C
APTM20AM05FT – Rev 0 June, 2003 APT website – http://www.advancedpower.com 3 - 3 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.1 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M5 2 3.5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 550 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 kW B 25/85 T25 = 298.16 K 4080 K TTB RR T 11exp Package outline Ra 3,2 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. T: Thermistor temperature RT: Thermistor value at T