APTM20AM05F ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32Power MOS 7® FREDFETs - Low R DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged /g183/g32Kelvin source for easy drive /g183/g32Very low stray inductance - Symmetrical design - M5 power connectors /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Low profile Phase leg MOSFET Power Module

APTM20AM05F– Rev 1 May, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 500µA 200 V VGS = 0V,VDS = 200V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 158.5A 5 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 27.4 Coss Output Capacitance 8.72 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.38 nF Qg Total gate Charge 448 Qgs Gate – Source Charge 172 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 300A 188 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2/g87 99 ns Eon Turn-on Switching Energy /g117 1852 Eoff Turn-off Switching Energy /g118 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 1820 µJ Eon Turn-on Switching Energy /g117 2432 Eoff Turn-off Switching Energy /g118 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 2124 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 317 IS Continuous Source current (Body diode) Tc = 80°C 234 A VSD Diode Forward Voltage V GS = 0V, IS = - 300A 1.3 V dv/dt Peak Diode Recovery /g119 8 V/ns Tj = 25°C 220 trr Reverse Recovery Time Tj = 125°C 420 ns Tj = 25°C 4.28 Qrr Reverse Recovery Charge IS = -300A VR = 100V diS/dt = 400A/µs Tj = 125°C 11.6 µC /g117 Eon includes diode reverse recovery. /g118 In accordance with JEDEC standard JESD24-1. /g119 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS /g163 - 300A di/dt /g163 700A/µs VR /g163 VDSS Tj /g163 150°C

APTM20AM05F– Rev 1 May, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.11 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTM20AM05F– Rev 1 May, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 7.5V 200 400 600 800 1000 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 23456789 VGS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 1.15 1.2 0 100 200 300 400 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 158.5A 120 160 200 240 280 320 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM20AM05F– Rev 1 May, 2004 APT website – http://www.advancedpower.com 5 – 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 158.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area DC line 10ms 1ms 100µs 100 1000 10000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=40V VDS=100V VDS=160V 0 100 200 300 400 500 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=300A TJ=25°C

APTM20AM05F– Rev 1 May, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 50 150 250 350 450 550 I D, Drain Current (A) td(on) and td(off) (ns) VDS=133V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 50 150 250 350 450 550 ID, Drain Current (A) tr and tf (ns) VDS=133V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 50 150 250 350 450 550 I D, Drain Current (A) Eon and Eoff (mJ) VDS=133V RG=1.2Ω TJ=125°C L=100µH Eon Eoff 2.5 3.5 4.5 5.5 02 . 557 . 5 1 0 1 2 . 5 1 5 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=133V ID=300A TJ=125°C L=100µH 100 150 200 250 300 350 30 70 110 150 190 230 270 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=133V D=50% RG=1.2Ω TJ=125°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.