APTM120U10SA ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7 ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration
  • AlN substrate for MOSFET improved thermal performance Benefits
  • Outstandi ng performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Single switch Series & parallel diodes MOSFET Power Module

APTM120U10SA Rev 0 September, 2005 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 1200V T j = 25°C 1 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 4 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 58A 100 120 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 20mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 28.9 Coss Output Capacitance 4.4 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.8 nF Qg Total gate Charge 1100 Qgs Gate – Source Charge 128 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 116A 716 nC Td(on) Turn-on Delay Ti me 20 Tr Rise Time 17 Td(off) Turn-off Delay Time 245 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω 62 ns Eon Turn-on Switching Energy 5 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 4.6 mJ Eon Turn-on Switching Energy 9.2 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 5.6 mJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 600 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A T j = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC

APTM120U10SA Rev 0 September, 2005 APT website – http://www.advancedpower.com 3 – 6 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 200 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 750 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 180 A IF = 180A 2.5 3 IF = 360A 3 VF Diode Forward Voltage IF = 180A T j = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time IF = 180A VR = 800V di/dt = 600A/µs Tj = 125°C 350 ns Tj = 25°C 1.7 Qrr Reverse Recovery Charge IF = 180A VR = 800V di/dt = 600A/µs Tj = 125°C 8.7 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.038 Series diode 0.46 RthJC Junction to Case Parallel diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g

APTM120U10SA Rev 0 September, 2005 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 120 160 200 240 280 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 160 200 240 280 320 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 40 80 120 160 200 240 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 58A 100 120 25 50 75 100 125 150 TC, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM120U10SA Rev 0 September, 2005 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=58A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C 1200 Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=240V VDS=600V VDS=960V 0 300 600 900 1200 1500 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=116A TJ=25°C

APTM120U10SA Rev 0 September, 2005 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 150 200 250 300 30 60 90 120 150 180 I D, Drain Current (A) td(on) and td(off) (ns) VDS=800V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 30 60 90 120 150 180 I D, Drain Current (A) tr and tf (ns) VDS=800V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 30 60 90 120 150 180 ID, Drain Current (A) Switching Energy (mJ) VDS=800V RG=1.2Ω TJ=125°C L=100µH Eon Eoff 02468 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=800V ID=116A TJ=125°C L=100µH Hard switching ZCS ZVS 100 125 150 175 30 50 70 90 110 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.