APTM120TDU57PG MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7 ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very low (12mm) profile
  • Each leg can be easily paralleled to achieve a dual common source confi guration of three ti mes the current capability
  • RoHS Compliant Triple dual common source MOSFET Power Module

APTM120TDU57PG– Rev 1 July, 2006 www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 1200V T j = 25°C 250 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 8.5A 570 684 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 5155 Coss Output Capacitance 770 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 130 pF Qg Total gate Charge 187 Qgs Gate – Source Charge 24 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 17A 120 nC Td(on) Turn-on Delay Ti me 20 Tr Rise Time 15 Td(off) Turn-off Delay Time 160 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A RG = 5Ω 45 ns Eon Turn-on Switching Energy 990 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, RG = 5Ω 685 µJ Eon Turn-on Switching Energy 1565 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, RG = 5Ω 857 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 17 IS Continuous Source current (Body diode) Tc = 80°C 13 A VSD Diode Forward Voltage V GS = 0V, IS = - 17A 1.3 V dv/dt Peak Diode Recovery X 10 V/ns trr Reverse Recovery Time T j = 25°C 1291 ns Qrr Reverse Recovery Charge IS = - 17A VR = 600V diS/dt = 100A/µs Tj = 25°C 29 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM120TDU57PG– Rev 1 July, 2006 www.microsemi.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M6 3 5 N.m Wt Package Weight 250 g 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com

APTM120TDU57PG– Rev 1 July, 2006 www.microsemi.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10 & 8V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 0123456789 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 1 02 03 04 0 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 8.5A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM120TDU57PG– Rev 1 July, 2006 www.microsemi.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=8.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C TC=25°C 1200 Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=240V VDS=600V VDS=960V 0 40 80 120 160 200 240 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=17A TJ=25°C

APTM120TDU57PG– Rev 1 July, 2006 www.microsemi.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 140 160 180 5 1 01 52 02 53 03 5 I D, Drain Current (A) td(on) and td(off) (ns) VDS=800V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 5 1 01 52 02 53 03 5 I D, Drain Current (A) tr and tf (ns) VDS=800V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 5 1 01 52 02 53 03 5 ID, Drain Current (A) Switching Energy (mJ) VDS=800V RG=5Ω TJ=125°C L=100µH Eon Eoff Eoff 0 5 10 15 20 25 30 35 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=800V ID=17A TJ=125°C L=100µH Hard switching ZCS ZVS 100 125 150 175 200 225 4 6 8 1 01 21 41 6 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=800V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.