APTM120DA30T1G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C

APTM120DA30T1G – Rev 0 December, 2007 www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VDS =1200V VGS = 0V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 25A 300 360 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 3 4 5 V IGSS Gate – Source Leakage Current V GS = ±30 V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14560 Coss Output Capacitance 1340 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 172 pF Qg Total gate Charge 560 Qgs Gate – Source Charge 90 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 25A 265 nC Td(on) Turn-on Delay Time 100 Tr Rise Time 60 Td(off) Turn-off Delay Time 315 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 25A RG = 2.2Ω 90 ns Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 60 A IF = 60A 2.5 3 IF = 120A 3 VF Diode Forward Voltage IF = 60A T j = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time Tj = 125°C 350 ns Tj = 25°C 560 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 2890 nC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.19 RthJC Junction to Case Thermal Resistance Diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g

APTM120DA30T1G – Rev 0 December, 2007 www.microsemi.com 3 – 5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K ⎛ − TTB RRT 11exp See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.04 0.08 0.12 0.16 0.2 rectangular Pulse D uration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration T: Thermistor temperature RT: Thermistor value at T

APTM120DA30T1G – Rev 0 December, 2007 www.microsemi.com 4 – 5 Low Voltage Output Characteristics TJ=25°C TJ=125°C 0 5 10 15 20 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=10V Low Voltage Output Characteristics 4.5V 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=6, 7, 8 & 9VTJ=125°C Normalized RDS(on) vs. Temperature 0.5 1.5 2.5 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDSon, Drain to Source ON resistance VGS=10V ID=25A Transfert Characteristics TJ=25°C TJ=125°C 0123456 VGS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle Gate Charge vs Gate to Source VDS=240V VDS=600V VDS=960V 0 100 200 300 400 500 600 Gate Charge (nC) VGS, Gate to Source Voltage ID=25A TJ=25°C Ciss Crss Coss 100 1000 10000 100000 0 50 100 150 200 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage

APTM120DA30T1G – Rev 0 December, 2007 www.microsemi.com 5 – 5 Typical Diode Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.2 0.4 0.6 0.8 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration TJ=25°C TJ=125°C 100 125 150 VF, Anode to Cathode Voltage (V) IF, Forward Current (A) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 30 A 60 A 120 A 100 200 300 400 0 200 400 600 800 1000 1200 -diF/dt (A/µs) trr, Reverse Recovery Time (ns) TJ=125°C VR=800V QRR vs. Current Rate Charge 30 A 60 A 120 A 0 200 400 600 800 1000 1200 -diF/dt (A/µs) QRR, Reverse Recovery Charge (µC) TJ=125°C VR=800V IRRM vs. Current Rate of Charge 30 A 60 A 120 A 0 200 400 600 800 1000 1200 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) TJ=125°C VR=800V Capacitance vs. Reverse Voltage 100 200 300 400 1 10 100 1000 V R, Reverse Voltage (V) C, Capacitance (pF) 100 25 50 75 100 125 150 175 Case Temperature (ºC) IF(AV) (A) Max. Average Forward Current vs. Case Temp. Duty Cycle = 0.5 TJ=175°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.