APTM120A20D ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Phase leg with Series diodes MOSFET Power Module

APTM120U20D Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 1.5mA 1200 V VGS = 0V,VDS = 1200V T j = 25°C 1.5 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 6 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 25A 200 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 6mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±450 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 15.2 Coss Output Capacitance 2.2 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 600 Qgs Gate – Source Charge 84 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 50A 390 nC Td(on) Turn-on Delay Ti me 10 Tr Rise Time 10 Td(off) Turn-off Delay Time 68 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A RG =0.8Ω 36 ns Eon Turn-on Switchi ng Energy X 2.79 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 0.6 mJ Eon Turn-on Switchi ng Energy X 5.6 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 0.81 mJ X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1200 V IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 120 A IF = 120A 2 2.5 IF = 2400A 2.3 VF Diode Forward Voltage IF = 120A T j = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C 470 ns Tj = 25°C 2.4 Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C 8 µC

APTM120U20D Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.1 RthJC Junction to Case Series diode 0.46 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTM120U20D Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 120 150 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10 & 8V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 150 180 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 3 06 09 0 1 2 0 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 25A 25 50 75 100 125 150 TC, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM120U20D Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=25A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C 1200 Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=240V VDS=600V VDS=960V 0 120 240 360 480 600 720 840 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=50A TJ=25°C

APTM120U20D Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 10 30 50 70 90 110 I D, Drain Current (A) td(on) and td(off) (ns) VDS=800V RG=0.8Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 10 30 50 70 90 110 ID, Drain Current (A) tr and tf (ns) VDS=800V RG=0.8Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 10 30 50 70 90 110 ID, Drain Current (A) Switching Energy (mJ) VDS=800V RG=0.8Ω TJ=125°C L=100µH Eon Eoff 0123456 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=800V ID=50A TJ=125°C L=100µH 100 125 150 175 200 10 20 30 40 50 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=800V D=50% RG=0.8Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.