APTM10UM01FA ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V ® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Single Switch MOSFET Power Module

APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 275A 1.5 1.6 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 12mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±450 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 60 Coss Output Capacitance 3.7 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 5.9 nF Qg Total gate Charge 2100 Qgs Gate – Source Charge 360 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID =550A 1080 nC Td(on) Turn-on Delay Time 185 Tr Rise Time 270 Td(off) Turn-off Delay Time 600 Tf Fall Time Inductive switching VGS = 15V VBus = 66V ID = 550A RG = 1Ω 175 ns Eon Turn-on Switchi ng Energy X 3.3 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 550A, RG =1Ω 3.6 mJ Eon Turn-on Switchi ng Energy X 3.65 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 550A, RG = 1Ω 3.85 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 860* IS Continuous Source current (Body diode) Tc = 80°C 640* A VSD Diode Forward Voltage V GS = 0V, IS = - 550A 1.3 V dv/dt Peak Diode Recovery Z 5 V/ns Tj = 25°C 190 trr Reverse Recovery Time IS = - 550A VR = 66V diS/dt = 600A/µs Tj = 125°C 370 ns Tj = 25°C 2.4 Qrr Reverse Recovery Charge IS = - 550A VR = 66V diS/dt = 600A/µs Tj = 125°C 10.2 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 860A di/dt ≤ 600A/µs VR ≤ VDSS Tj ≤ 150°C

APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.05 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline (dimensions in mm)

APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.01 0.02 0.03 0.04 0.05 0.06 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 500 1000 1500 2000 2500 3000 3500 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics VGS=15V, 10V & 9V Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 240 360 480 600 720 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 0 100 200 300 400 500 600 700 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 275A 200 400 600 800 1000 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 5 - 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 275A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 10000 11 0 1 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse TJ=150°C limited by RDS on Ciss Crss Coss 1000 10000 100000 1000000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=20V VDS=50V VDS=80V 0 500 1000 1500 2000 2500 3000 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=550A TJ=25°C

APTM10UM01FA– Rev 0 May, 2005 APT website – http://www.advancedpower.com 6 - 6 Delay Times vs Current td(on) td(off) 100 200 300 400 500 600 700 100 300 500 700 900 ID, Drain Current (A) td(on) and td(off) (ns) VDS=66V RG=1Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 150 200 250 300 350 100 300 500 700 900 I D, Drain Current (A) tr and tf (ns) VDS=66V RG=1Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Eon and Eoff (mJ) VDS=66V RG=1Ω TJ=125°C L=100µH Eon Eoff 02468 1 0 1 2 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=66V ID=550A TJ=125°C L=100µH Hard switching ZVS ZCS 200 300 400 500 600 700 800 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=66V D=50% RG=1Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 10000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.