APTM10HM09FT ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile Full - Bridge MOSFET Power Module

APTM10HM09FT – Rev 0 May, 2005 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V T j = 125°C 500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 69.5A 9 9.5 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 9875 Coss Output Capacitance 3940 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 1470 pF Qg Total gate Charge 350 Qgs Gate – Source Charge 60 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID =139A 180 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 70 Td(off) Turn-off Delay Time 95 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A RG = 5Ω 125 ns Eon Turn-on Switchi ng Energy X 552 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 604 µJ Eon Turn-on Switchi ng Energy X 608 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 641 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 139 IS Continuous Source current (Body diode) Tc = 80°C 100 A VSD Diode Forward Voltage V GS = 0V, IS = - 139A 1.3 V dv/dt Peak Diode Recovery Z 8 V/ns Tj = 25°C 190 trr Reverse Recovery Time IS = - 139A VR = 66V diS/dt = 100A/µs Tj = 125°C 370 ns Tj = 25°C 0.4 Qrr Reverse Recovery Charge IS = - 139A VR = 66V diS/dt = 100A/µs Tj = 125°C 1.7 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 139A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM10HM09FT – Rev 0 May, 2005 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 1.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp Package outline (dimensions in mm) T: Thermistor temperature RT: Thermistor value at T

APTM10HM09FT – Rev 0 May, 2005 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 100 200 300 400 500 600 0 4 8 12 16 20 24 28 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics VGS=15V, 10V & 9V Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 100 120 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 2 55 07 5 1 0 0 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 69.5A 100 120 140 160 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM10HM09FT – Rev 0 May, 2005 APT website – http://www.advancedpower.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 69.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 11 0 1 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse TJ=150°C limited by RDS on Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=20V VDS=50V VDS=80V 0 100 200 300 400 500 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=139A TJ=25°C

APTM10HM09FT – Rev 0 May, 2005 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 0 50 100 150 200 250 I D, Drain Current (A) td(on) and td(off) (ns) VDS=66V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 50 100 150 200 250 I D, Drain Current (A) tr and tf (ns) VDS=66V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 0 50 100 150 200 250 ID, Drain Current (A) Eon and Eoff (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH Eon Eoff 0.5 1.5 2.5 0 1 02 03 04 05 06 0 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=66V ID=139A TJ=125°C L=100µH Hard switching ZVS ZCS 100 150 200 250 300 25 50 75 100 125 150 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.