APTM10DSKM19T3 ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • Each leg can be easily paralleled to achieve a single buck of twice the current capability Dual Buck chopper MOSFET Power Module

APTM10DSKM19T3– Rev 0 May, 2005 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 250 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V T j = 125°C 1000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 35A 19 20 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 5100 Coss Output Capacitance 1900 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 800 pF Qg Total gate Charge 200 Qgs Gate – Source Charge 40 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 70A 92 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 70 Td(off) Turn-off Delay Time 95 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A RG = 5Ω 125 ns Eon Turn-on Switchi ng Energy X 276 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, RG = 5Ω 302 µJ Eon Turn-on Switchi ng Energy X 304 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, RG = 5Ω 320 µJ X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 500 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 60 A IF = 60A 1.1 IF = 180A 1.4 VF Diode Forward Voltage IF = 60A T j = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 60 Qrr Reverse Recovery Charge IF = 60A VR = 133V di/dt =200A/µs Tj = 125°C 250 nC

APTM10DSKM19T3– Rev 0 May, 2005 APT website – http://www.advancedpower.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.6 RthJC Junction to Case diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 1.5 4.7 N.m Wt Package Weight 110 g Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp Package outline (dimensions in mm) T: Thermistor temperature RT: Thermistor value at T

APTM10DSKM19T3– Rev 0 May, 2005 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 100 150 200 250 300 0 4 8 12 16 20 24 28 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics VGS=15V, 10V & 9V Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 100 125 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 1.2 1.4 1.6 0 50 100 150 200 250 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 35A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM10DSKM19T3– Rev 0 May, 2005 APT website – http://www.advancedpower.com 5 - 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 35A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100 1000 11 0 1 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse TJ=150°C limited by RDS on Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=20V VDS=50V VDS=80V 0 40 80 120 160 200 240 280 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=70A TJ=25°C

APTM10DSKM19T3– Rev 0 May, 2005 APT website – http://www.advancedpower.com 6 - 6 Delay Times vs Current td(on) td(off) 100 120 0 2 04 06 08 0 1 0 0 1 2 0 I D, Drain Current (A) td(on) and td(off) (ns) VDS=66V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 140 160 0 2 04 06 08 0 1 0 0 1 2 0 I D, Drain Current (A) tr and tf (ns) VDS=66V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.25 0.5 0.75 0 2 04 06 08 0 1 0 0 1 2 0 ID, Drain Current (A) Eon and Eoff (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH Eon Eoff 0.5 1.5 0 1 02 03 04 05 06 0 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=66V ID=70A TJ=125°C L=100µH Hard switching ZVS ZCS 100 150 200 250 300 13 25 38 50 63 75 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.