APTM10DAM02G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile
  • RoHS Compliant Boost chopper MOSFET Power Module

APTM10DAM02G– Rev 1 July, 2006 www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 400 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 200A 2.25 2.5 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 10mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 40 Coss Output Capacitance 15.7 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 5.9 nF Qg Total gate Charge 1360 Qgs Gate – Source Charge 240 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 400A 720 nC Td(on) Turn-on Delay Time 160 Tr Rise Time 240 Td(off) Turn-off Delay Time 500 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 400A RG = 1.25Ω 160 ns Eon Turn-on Switching Energy 2.2 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, RG =1.25Ω 2.41 mJ Eon Turn-on Switching Energy 2.43 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, RG = 1.25Ω 2.56 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 400 A IF = 400A 1 IF = 800A 1.4 VF Diode Forward Voltage IF = 400A T j = 125°C 0.9 V Tj = 25°C 60 trr Reverse Recovery Time Tj = 125°C 110 ns Tj = 25°C 800 Qrr Reverse Recovery Charge IF = 400A VR = 133V di/dt =800A/µs Tj = 125°C 3360 nC

APTM10DAM02G– Rev 1 July, 2006 www.microsemi.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.1 RthJC Junction to Case Thermal Resistance Diode 0.14 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTM10DAM02G– Rev 1 July, 2006 www.microsemi.com 4 - 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 500 1000 1500 2000 2500 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics VGS=15V, 10V & 9V Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 160 240 320 400 480 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 100 200 300 400 500 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 200A 100 200 300 400 500 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM10DAM02G– Rev 1 July, 2006 www.microsemi.com 5 - 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 200A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 10000 11 0 1 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A)Single pulse TJ=150°C TC=25°C limited by RDSon Ciss Crss Coss 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=20V VDS=50V VDS=80V 0 400 800 1200 1600 2000 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=400A TJ=25°C

APTM10DAM02G– Rev 1 July, 2006 www.microsemi.com 6 - 6 Delay Times vs Current td(on) td(off) 100 200 300 400 500 600 50 150 250 350 450 550 650 I D, Drain Current (A) td(on) and td(off) (ns) VDS=66V RG=1.25Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 150 200 250 300 50 150 250 350 450 550 650 ID, Drain Current (A) tr and tf (ns) VDS=66V RG=1.25Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff Eoff 50 150 250 350 450 550 650 I D, Drain Current (A) Eon and Eoff (mJ) VDS=66V RG=1.25Ω TJ=125°C L=100µH Eon Eoff 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=66V ID=400A TJ=125°C L=100µH Hard switching ZVS ZCS 100 200 300 400 500 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=66V D=50% RG=1.25Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.