APTM100UM65D-ALN ADPOW | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Power MOS 7 ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance Benefits
  • Outstandi ng performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Single switch with Series diode MOSFET Power Module

APTM100UM65D-AlN – Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 1mA 1000 V VGS = 0V,VDS= 1000V Tj = 25°C 400 µA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V Tj = 125°C 2 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 75A 65 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 20mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 28.5 Coss Output Capacitance 5.08 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.9 nF Qg Total gate Charge 1068 Qgs Gate – Source Charge 136 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 145A 692 nC Td(on) Turn-on Delay Ti me 18 Tr Rise Time 14 Td(off) Turn-off Delay Time 140 Tf Fall Time VGS = 15V VBus = 500V ID = 145A RG = 0.75Ω 55 ns Eon Turn-on Switchi ng Energy X 4.8 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω 2.9 mJ Eon Turn-on Switchi ng Energy X 8 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω 3.9 mJ X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1000 V IRM Maximum Reverse Leakage Current VR=1000V T j = 125°C 2 mA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 100°C 240 A IF = 240A 1.9 2.5 IF = 480A 2.2 VF Diode Forward Voltage IF = 240A T j = 125°C 1.7 V Tj = 25°C 280 trr Reverse Recovery Time IF = 240A VR = 667V di/dt = 800A/µs Tj = 125°C 350 ns Tj = 25°C 3 Qrr Reverse Recovery Charge IF = 240A VR = 667V di/dt = 800A/µs Tj = 125°C 14.4 µC

APTM100UM65D-AlN – Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.038 RthJC Junction to Case Series diode 0.23 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To Heatsink M6 3 5 Torque Mounting torque For teminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTM100UM65D-AlN – Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 120 160 200 240 280 320 360 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 160 240 320 400 480 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 80 160 240 320 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 72.5A 120 160 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100UM65D-AlN – Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=72.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse T J=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 300 600 900 1200 1500 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=145A TJ=25°C

APTM100UM65D-AlN – Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 120 160 50 94 138 182 226 270 I D, Drain Current (A) td(on) and td(off) (ns) VDS=670V RG=0.75Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 50 94 138 182 226 270 I D, Drain Current (A) tr and tf (ns) VDS=670V RG=0.75Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH Eon Eoff 012345678 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=670V ID=145A TJ=125°C L=100µH Hard switching ZCS 100 150 200 250 300 15 35 55 75 95 115 135 ID, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=670V D=50% RG=0.75Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.