APTM100UM60F-ALN ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7 ® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Single Switch MOSFET Power Module

APTM100UM60F–AlN Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 1.5mA 1000 V VGS = 0V,VDS = 1000V T j = 25°C 1.5 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 5 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 64.5A 60 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 15mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 31.1 Coss Output Capacitance 5.28 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.96 nF Qg Total gate Charge 1116 Qgs Gate – Source Charge 144 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 129A 732 nC Td(on) Turn-on Delay Ti me 18 Tr Rise Time 12 Td(off) Turn-off Delay Time 155 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 129A RG =0.8Ω 40 ns Eon Turn-on Switchi ng Energy X 5.4 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 129A, RG = 0.8Ω 3.7 mJ Eon Turn-on Switchi ng Energy X 8.5 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 129A, RG = 0.8Ω 4.7 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 129 IS Continuous Source current (Body diode) Tc = 80°C 97 A VSD Diode Forward Voltage V GS = 0V, IS = - 129A 1.3 V dv/dt Peak Diode Recovery Z 18 V/ns Tj = 25°C 320 trr Reverse Recovery Time IS = - 129A VR = 500V diS/dt = 600A/µs Tj = 125°C 650 ns Tj = 25°C 21.6 Qrr Reverse Recovery Charge IS = - 129A VR = 500V diS/dt = 600A/µs Tj = 125°C 58.3 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 129A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM100UM60F–AlN Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.055 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTM100UM60F–AlN Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.01 0.02 0.03 0.04 0.05 0.06 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 120 180 240 300 360 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10&8V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 180 240 300 360 420 480 0123456789 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 50 100 150 200 250 300 350 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 64.5A 100 120 140 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100UM60F–AlN Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=64.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse T J=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 250 500 750 1000 1250 1500 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=129A TJ=25°C

APTM100UM60F–AlN Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 120 160 200 40 80 120 160 200 240 I D, Drain Current (A) td(on) and td(off) (ns) VDS=670V RG=0.8Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 40 80 120 160 200 240 I D, Drain Current (A) tr and tf (ns) VDS=670V RG=0.8Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 2.5 7.5 12.5 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy (mJ) VDS=670V RG=0.8Ω TJ=125°C L=100µH Eon Eoff 0123456 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=670V ID=129A TJ=125°C L=100µH Hard switching ZCS ZVS 100 150 200 250 10 30 50 70 90 110 130 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=670V D=50% RG=0.8Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.