APTM100UM45F-ALN ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance Benefits
  • Outstandi ng performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Single Switch MOSFET Power Module

APTM100UM45F-AlN – Rev 1 August, 2005 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS= 1000V Tj = 25°C 600 µA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V Tj = 125°C 3 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 107.5A 45 55 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 30mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 42.7 Coss Output Capacitance 7.6 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 1.3 nF Qg Total gate Charge 1602 Qgs Gate – Source Charge 204 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 215A 1038 nC Td(on) Turn-on Delay Ti me 18 Tr Rise Time 14 Td(off) Turn-off Delay Time 140 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 215A RG = 0.5Ω 55 ns Eon Turn-on Switching Energy 7.2 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω 4.3 mJ Eon Turn-on Switching Energy 12 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω 5.8 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 215 IS Continuous Source current (Body diode) Tc = 80°C 160 A VSD Diode Forward Voltage V GS = 0V, IS = - 215A 1.3 V dv/dt Peak Diode Recovery X 18 V/ns Tj = 25°C 310 trr Reverse Recovery Time Tj = 125°C 625 ns Tj = 25°C 12 Qrr Reverse Recovery Charge IS = - 215A VR = 500V diS/dt = 600A/µs Tj = 125°C 36 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 215A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM100UM45F-AlN – Rev 1 August, 2005 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Transistor 0.025 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To Heatsink M6 3 5 Torque Mounting torque For teminals M5 2 3.5 N.m Wt Package Weight 280 g

APTM100UM45F-AlN – Rev 1 August, 2005 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.005 0.01 0.015 0.02 0.025 0.03 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 120 180 240 300 360 420 480 540 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 240 360 480 600 720 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 120 240 360 480 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 107.5A 120 150 180 210 240 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100UM45F-AlN – Rev 1 August, 2005 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=107.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse T J=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 350 700 1050 1400 1750 2100 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=215A TJ=25°C

APTM100UM45F-AlN – Rev 1 August, 2005 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 120 150 80 120 160 200 240 280 320 360 400 I D, Drain Current (A) td(on) and td(off) (ns) VDS=670V RG=0.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 80 120 160 200 240 280 320 360 400 I D, Drain Current (A) tr and tf (ns) VDS=670V RG=0.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy (mJ) VDS=670V RG=0.5Ω TJ=125°C L=100µH Eon Eoff 0123456 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=670V ID=215A TJ=125°C L=100µH Hard switching ZCS ZVS 100 150 200 250 300 20 50 80 110 140 170 200 ID, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=670V D=50% RG=0.5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.