APTM100U13S ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS V ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance Single switch Series & parallel diodes MOSFET Power Module

APTM100U13S – Rev 2 July, 2005 APT website – http://www.advancedpower.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS= 1000V T j = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V T j = 125°C 400 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 32.5A 130 145 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 10mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 26.4 31.6 Coss Output Capacitance 2.38 3.32 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 1.16 1.72 nF Qg Total gate Charge 1340 2000 Qgs Gate – Source Charge 116 180 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 65A 660 1000 nC Td(on) Turn-on Delay Ti me 20 Tr Rise Time 20 Td(off) Turn-off Delay Time 125 Tf Fall Time Inductive Switching @ 25°C VGS = 15V VBus = 667V ID = 65A RG = 1.5Ω 40 ns Eon Turn-on Switching Energy 2.6 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, RG = 1.5Ω 1.6 µJ Eon Turn-on Switching Energy 4.2 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, RG = 1.5Ω 1.82 µJ RthJC Junction to Case 0.1 °C/W Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 600 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A T j = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC RthJC Junction to Case 0.46 °C/W

APTM100U13S – Rev 2 July, 2005 APT website – http://www.advancedpower.com 3 – 5 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1000 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1000V Tj = 125°C 500 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 40°C 100 A IF = 100A 1.9 2.5 IF = 200A 2.2 VF Diode Forward Voltage IF = 100A T j = 125°C 1.7 V Tj = 25°C 300 trr Reverse Recovery Time Tj = 125°C 360 ns Tj = 25°C 800 Qrr Reverse Recovery Charge IF = 100A VR = 667V di/dt = 200A/µs Tj = 125°C 4050 nC RthJC Junction to Case 0.6 °C/W Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 M4 1.2 Torque Mounting torque M6 3 5 N.m Wt Package Weight 400 g

APTM100U13S – Rev 2 July, 2005 APT website – http://www.advancedpower.com 4 – 5 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V VGS=15V 100 150 200 0 5 10 15 20 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics Transfert Characteristics TJ=-55°CTJ=25°C TJ=125°C 100 150 200 0123456 VGS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.90 1.00 1.10 1.20 1.30 0 50 100 150 200 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 32.5A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100U13S – Rev 2 July, 2005 APT website – http://www.advancedpower.com 5 – 5 0.90 0.95 1.00 1.05 1.10 1.15 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 T J, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=32.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Ciss Crss Coss 100 1000 10000 100000 0.01 0.1 1 10 100 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 500 1000 1500 2000 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=65A TJ=25°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Operating Frequency vs Drain Current Hard switching ZCS ZVS 100 150 200 250 10 20 30 40 50 60 ID, Drain Current (A) Frequency (kHz) VDS=667V D=50% R G=1.5Ω TJ=125°C TC=75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.