APTM100H35FT ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOS 7 ® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile Full - Bridge MOSFET Power Module

APTM100H35FT– Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 250µA 1000 V VGS = 0V,VDS = 1000V T j = 25°C 250 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 11A 350 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2.5mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 5.2 Coss Output Capacitance 0.88 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.16 nF Qg Total gate Charge 186 Qgs Gate – Source Charge 24 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 43A 122 nC Td(on) Turn-on Delay Ti me 18 Tr Rise Time 12 Td(off) Turn-off Delay Time 155 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5Ω 40 ns Eon Turn-on Switchi ng Energy X 900 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 623 µJ Eon Turn-on Switchi ng Energy X 1423 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω 779 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 22 IS Continuous Source current (Body diode) Tc = 80°C 17 A VSD Diode Forward Voltage V GS = 0V, IS = - 22A 1.3 V dv/dt Peak Diode Recovery Z 18 V/ns Tj = 25°C 320 trr Reverse Recovery Time IS = - 22A VR = 500V diS/dt = 100A/µs Tj = 125°C 650 ns Tj = 25°C 3.6 Qrr Reverse Recovery Charge IS = - 22A VR = 500V diS/dt = 100A/µs Tj = 125°C 9.72 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 22A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM100H35FT– Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 kΩ B 25/85 T 25 = 298.16 K 4080 K  − TT B RRT 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTM100H35FT– Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 0 5 10 15 20 25 30 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15, 10&8V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 0123456789 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 1 02 03 04 05 06 0 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 11A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100H35FT– Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 – 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=11A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10ms 1ms 100µs 100 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse T J=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 50 100 150 200 250 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=22A TJ=25°C

APTM100H35FT– Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 140 160 180 0 1 02 03 04 05 0 I D, Drain Current (A) td(on) and td(off) (ns) VDS=670V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 1 02 03 04 05 0 I D, Drain Current (A) tr and tf (ns) VDS=670V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 0 1 02 03 04 05 0 ID, Drain Current (A) Switching Energy (mJ) VDS=670V RG=5Ω TJ=125°C L=100µH Eon Eoff 0.5 1.5 2.5 3.5 0 5 10 15 20 25 30 35 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=670V ID=22A TJ=125°C L=100µH Hard switching ZCS ZVS 100 125 150 175 200 225 250 5 8 10 13 15 18 20 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=670V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.