APTM100A13D ADPOW | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • Power MOS 7 ® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile Phase leg with Series diodes MOSFET Power Module

APTM100A13D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 1.5mA 1000 V VGS = 0V,VDS= 1000V Tj = 25°C 600 µA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V Tj = 125°C 2 mA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 32.5A 130 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 6mA 3 5 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±450 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 15.2 Coss Output Capacitance 2.6 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.44 nF Qg Total gate Charge 562 Qgs Gate – Source Charge 75 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 65A 363 nC Td(on) Turn-on Delay Ti me 9 Tr Rise Time 9 Td(off) Turn-off Delay Time 50 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus =667V ID = 65A RG = 0.5Ω 24 ns Eon Turn-on Switchi ng Energy X 2.13 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω 0.46 mJ Eon Turn-on Switchi ng Energy X 4.5 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω 0.57 mJ X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1000 V IRM Maximum Reverse Leakage Current VR=1000V T j = 125°C 1 mA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 100 °C 120 A IF = 120A 1.9 2.5 IF = 240A 2.2 VF Diode Forward Voltage IF = 120A T j = 125°C 1.7 V Tj = 25°C 280 trr Reverse Recovery Time IF = 120A VR = 670V di/dt = 400A/µs Tj = 125°C 350 ns Tj = 25°C 1.5 Qrr Reverse Recovery Charge IF = 120A VR = 670V di/dt = 400A/µs Tj = 125°C 7.2 µC

APTM100A13D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.10 RthJC Junction to Case Series diode 0.46 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTM100A13D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 120 150 180 0 4 8 1 21 62 02 42 8 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 180 240 300 360 0123456789 1 0 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 30 60 90 120 150 180 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 32.5A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM100A13D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 - 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID=32.5A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse T J=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 120 240 360 480 600 720 840 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=65A TJ=25°C

APTM100A13D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 - 6 Delay Times vs Current td(on) td(off) 20 30 40 50 60 70 80 90 100 I D, Drain Current (A) td(on) and td(off) (ns) VDS=667V RG=0.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 20 30 40 50 60 70 80 90 100 I D, Drain Current (A) tr and tf (ns) VDS=667V RG=0.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 20 30 40 50 60 70 80 90 100 ID, Drain Current (A) Switching Energy (mJ) VDS=667V RG=0.5Ω TJ=125°C L=100µH Eon Eoff 012345 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=667V ID=65A TJ=125°C L=100µH Hard switching ZCS 100 150 200 250 300 10 20 30 40 50 60 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=667V D=50% RG=0.5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.