APTM08TAM04P ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Power MOSFETs - Low R DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very low (12mm) profile
  • Each leg can be easily paralleled to achieve a phase leg of three times the current capability
  • Module can be configured as a three phase bridge
  • Module can be configured as a boost followed by a full bridge Triple phase leg MOSFET Power Module

APTM08TAM04P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 1mA 75 V VGS = 0V,VDS = 75V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 60V T j = 125°C 250 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 60A 04 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1mA 2 4 V IGS S Gate – Source Leakage Current V GS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 4530 Coss Output Capacitance 1080 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 450 pF Qg Total gate Charge 153 Qgs Gate – Source Charge 25 Qgd Gate – Drain Charge VGS = 10V VBus = 60V ID =120A 82 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 60 Td(off) Turn-off Delay Time 100 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 40V ID = 120A RG = 5Ω 65 ns Eon Turn-on Switchi ng Energy X 290 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 40V ID = 120A, RG = 5Ω 317 µJ Eon Turn-on Switchi ng Energy X 319 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 40V ID = 120A, RG = 5Ω 336 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 120 IS Continuous Source current (Body diode) Tc = 80°C 90 A VSD Diode Forward Voltage V GS = 0V, IS = - 120A 1.3 V dv/dt Peak Diode Recovery Z 6 V/ns trr Reverse Recovery Time T j = 25°C 100 200 ns Qrr Reverse Recovery Charge IS = - 120A VR = 40V diS/dt = 100A/µs Tj = 25°C 300 nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 120A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C

APTM08TAM04P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case IGBT 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M6 3 5 N.m Wt Package Weight 250 g Package outline 5 places (3:1)

APTM08TAM04P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V VGS=10V 100 150 200 250 00 . 511 . 522 . 533 . 54 V DS, Drain to Source Voltage (V) ID, Drain Current (A) Low Voltage Output Characteristics Transfert Characteristics TJ=25°C 120 160 200 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 0 50 100 150 200 250 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 60A 100 120 140 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTM08TAM04P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 60A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100µs 1ms 100 1000 11 0 1 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A) Single pulse TJ=150°C limited by RDS on Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=15V VDS=60V 0 50 100 150 200 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=120A TJ=25°C

APTM08TAM04P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 120 25 50 75 100 125 150 175 200 I D, Drain Current (A) td(on) and td(off) (ns) VDS=40V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 25 50 75 100 125 150 175 200 ID, Drain Current (A) tr and tf (ns) VDS=40V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.25 0.5 0.75 25 50 75 100 125 150 175 200 ID, Drain Current (A) Eon and Eoff (mJ) VDS=40V RG=5Ω TJ=125°C L=100µH Eon Eoff 0.5 1.5 0 1 02 03 04 05 06 0 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=40V ID=120A TJ=125°C L=100µH Hard switching ZVS ZCS 100 150 200 250 300 20 40 60 80 100 120 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=40V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.