APTLGF300A1208G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated
  • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter
  • Low stray inductance
  • M5 power connectors
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Very high noise immunity (common mode rejection > 25kV/µs)
  • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer
  • 5V logic level with Schmitt-trigger Input
  • Single VDD=5V supply required
  • Secondary auxiliary power supplies internally generated (15V, -6V)
  • Optocoupler qualified to AEC-Q100 test quidelines
  • RoHS compliant

APTLGF300A1208G – Rev 0 February, 2011 www.microsemi.com 2-6 All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 400 IC Continuous Collector Current TC = 80°C 300 ICM Pulsed Collector Current T C = 25°C 600 A PD Maximum Power Dissipation T C = 25°C 1780 W RBSOA Reverse Bias Safe Operating Area T j = 125°C 600A @ 1200V

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 750 µA Tj = 25°C 3.2 3.9 VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 300A Tj = 125°C 4 V Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 2.9 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.52 nF Tr Rise Time 50 Tf Fall Time Inductive Switching (25°C) VDD = VIN = 5V VBus = 600V ; IC = 300A 30 ns Tr Rise Time 60 Tf Fall Time 40 ns Eon Turn-on Switching Energy 25 Eoff Turn-off Switching Energy Inductive Switching (125°C) VDD = VIN = 5V VBus = 600V IC = 300A 15 mJ Isc Short Circuit data VDD = VIN = 5V; VBus =900V tp ≤ 10µs ; Tj = 125°C 1800 A RthJC Junction to Case thermal resistance 0.07 °C/W

APTLGF300A1208G – Rev 0 February, 2011 www.microsemi.com 3-6 Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 2.1 VF Diode Forward Voltage I F = 300A Tj = 125°C 1.9 V Tj = 25°C 120 trr Reverse Recovery Time Tj = 125°C 210 ns Tj = 25°C 22 Qrr Reverse Recovery Charge Tj = 125°C 56 µC Tj = 25°C 7.2 Err Reverse Recovery Energy IF = 300A VR = 600V di/dt =6000A/µs Tj = 125°C 18 mJ RthJC Junction to Case Thermal Resistance 0.12 °C/W 2. Driver Absolute maximum ratings Symbol Parameter Max ratings Unit VDD Supply Voltage 5.5 VINi Input signal voltage i=L, H 5.5 V VINi = 0V, i =L & H 0.35 IVDDmax Maximum Supply current VDD=5V, VINH = /VINL ; Fout = 50kHz 2 A fmax Maximum Switching Frequency 50 kHz Driver Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VDD Operating Supply Voltage 4.5 5 5.5 V VINi(max) Maximum Input Voltage -0.5 5 5.5 VINi (th+) Positive Going Threshold Voltage 3.2 VINi(th-) Negative Going Threshold Voltage 1 V RINi Input Resistance * i = L, H 1 k Ω Td(on) Turn On delay time Driver + IGBT 1100 n DT Built in dead time 600 Td(off) Turn Off delay time Driver + IGBT 750 ns PWD Pulse Width Distortion 300 PDD Propagation Delay Difference between any two driver Td(on) - Td(off) -350 350 ns VISOL Primary to Secondary Isolation 2500 V RMS * Low impedance guarantees good noise immunity. n Including built in dead time.

APTLGF300A1208G – Rev 0 February, 2011 www.microsemi.com 4-6 3. Package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TOP Operating Ambient Temperature -40 85 TSTG Storage Temperature Range -40 100 TC Operating Case Temperature -40 100 To heatsink M5 2 4.7 Torque Mounting torque For terminals M5 2 4 N.m Wt Package Weight 550 g 4. LP8 Package outline (dimensions in mm) Ra 3,2

APTLGF300A1208G – Rev 0 February, 2011 www.microsemi.com 5-6 Typical IGBT Performance Curve Output Characteristics TJ=25°C TJ=125°C 100 200 300 400 500 600 0123456 VCE (V) IC (A) VDD = 5V VIN =5V Energy losses vs Collector Current Eon Eoff 0 100 200 300 400 500 600 I C (A) E (mJ) VCE = 600V VDD = 5V VIN = 5V TJ = 125°C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration D = 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) hard switching 0 50 100 150 200 250 300 350 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% VDD=5V VIN=5V TJ=125°C TC=75°C Operating Frequency vs Collector Current Limited by internal gate drive power dissipation Reverse Bias Safe Operating Area 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 V CE (V) IC (A) TJ=125°C

APTLGF300A1208G – Rev 0 February, 2011 www.microsemi.com 6-6 Typical diode Performance Curve Forward Characteristic of diode TJ=25°C TJ=125°C 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 V F, Anode to Cathode Voltage (V) IF, Forward Current (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.02 0.04 0.06 0.08 0.1 0.12 0.14 Rectangular Pulse Duration in Seconds Thermal Impedance (°C/W) Energy losses vs Collector Current 0 100 200 300 400 500 600 I F (A) Err (mJ) VR= 600V TJ = 125°C Microsemi reserves the right to change, without notice, the specifications and information contained herein