APTJC120AM13VCT1AG MICROSEMI | Alldatasheet
Document overview
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Technical content
Features
SiC JFET, Normally off (8 * SJEC120R100 in parallel per switch) SiC Schottky Diode (2 * SDC30S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Internal RC decoupling snubber High level of integration AlN substrate for improved thermal performance Internal thermistor for temperature monitoring Semisouth driver board (SGDR2500P2) recommended for this module) Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for both power and signal for easy PCB mounting Low profile RoHS Compliant Phase leg SiC Power Module VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C
APTJC120AM13VCT1AG – Rev 2 October, 2012 www.microsemi.com 2 – 4
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit VDSX Drain-Source & Drain-Gate Blocking Voltage VGS ≤ 0V, ID < IDSS 1200 V IGL Total Gate-Source Leakage V GS > -15 V, VDS = 0 V 2.4 mA IDSS Off -State Drain Current V GS ≤ -5 V, VDS = 1200 V 1.6 mA RDS(on) Drain-Source On-state Resistance V GS = 2.5V, ID = 40 A 13 m RG Internal Gate Resistance (per JFET) Drain-source shorted, f= 1MHz 1.5 Vth Threshold Voltage V DS = 1V, IDS = 300 mA 0.75 1.00 1.25 V Tc = 50°C, TJ=125°C 100 ID Continuous Drain Current Tc = 80°C, TJ=125°C 75 A PD Maximum Power Dissipation 357 W SiC diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25 °C 60 600 IR Reverse Leakage Current V R = 1200 V Tj = 175 °C 1200 µA IF(AV) Continuous Forward Current Tc < 145 °C 60 A Tj = 25 °C 1.6 VF Diode Forward Voltage I F = 60 A Tj = 175 °C 2.4 2.9 V QC Total Capacitive Charge IF = 60 A, VR = 400 V di/dt = 1000 A/µs 260 nC f = 100 kHz, VR = 1 V 7380 f = 100 kHz, VR = 300 V 304 C Total Capacitance f = 100 kHz, VR = 600 V 212 pF Output resistance and capacitor characteristics Symbol Characteristic Min Typ Max Unit R3 Input impedance 4 R3tol Tolerance 5 % PD3 Power dissipation 5 W C3 Ceramic Capacitor value 4.7 nF C3tol Tolerance 10 % Urdc3 Rated DC voltage 1000 V Input resistance and capacitor characteristics Symbol Characteristic Min Typ Max Unit Ri Input impedance 1 Ritol Tolerance 5 % PDi Power dissipation i=1, 2 1 W Ci Ceramic Capacitor value 33 nF Citol Tolerance 10 % Urdci Rated DC voltage i=1, 2 50 V
APTJC120AM13VCT1AG – Rev 2 October, 2012 www.microsemi.com 3 – 4 Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25 °C 22 k R25/R25 Resistance tolerance 5 B/B Beta tolerance 3 % B 25/100 T 25 = 298.16 K 3980 K TTB RRT 11exp Thermal and package characteristics Symbol Characteristic Min Typ Max Unit JFET 0.35 RthJC Junction to Case Thermal Resistance Diode 0.72 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60 Hz 4000 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heat sink M4 2 3 N.m Wt Package Weight 80 g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T
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