APTGF90DA60T1G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Boost chopper NPT IGBT Power Module VCES = 600V IC = 90A @ Tc = 80°C

APTGF90DA60T1G – Rev 0 August, 2007 www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 500 µA Tj = 25°C 2.0 2.5 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 90A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 1mA 3 5 V IGES Gate – Emitter Leakage Current V GE = 20 V, VCE = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 4300 Coes Output Capacitance 470 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 400 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 290 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 90A 200 nC Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω 30 ns Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω 40 ns Eon Turn-on Switching Energy T j = 125°C 4.3 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Tj = 125°C 3.5 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 100 A IF = 100A 1.6 2 IF = 200A 2 VF Diode Forward Voltage IF = 100A Tj = 125°C 1.3 V Tj = 25°C 160 trr Reverse Recovery Time Tj = 125°C 220 ns Tj = 25°C 290 Qrr Reverse Recovery Charge IF = 100A VR = 400V di/dt =200A/µs Tj = 125°C 1530 nC

APTGF90DA60T1G – Rev 0 August, 2007 www.microsemi.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.3 RthJC Junction to Case Thermal Resistance Diode 0.55 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TTB RRT 11exp See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTGF90DA60T1G – Rev 0 August, 2007 www.microsemi.com 4 – 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 100 150 200 250 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 100 150 200 250 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 100 150 200 250 0123456789 1 0 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=180A Ic=90A Ic=45A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=180A Ic=90A Ic=45A 0.5 1.5 2.5 3.5 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.80 0.90 1.00 1.10 1.20 25 50 75 100 125 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 100 120 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 50 100 150 200 250 300 350 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 90A TJ = 25°C

APTGF90DA60T1G – Rev 0 August, 2007 www.microsemi.com 5 – 6 VGE = 15V 25 50 75 100 125 150 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 25°C VCE = 400V RG = 5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 150 200 250 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 5Ω VGE=15V, TJ=125°C 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 5Ω TJ = 25°C TJ = 125°C 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 5Ω TJ = 25°C TJ = 125°C 0 25 50 75 100 125 150 I CE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 5Ω Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A Eon, 45A Eoff, 45A 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A Eon, 45A Eoff, 45A 25 50 75 100 125 T J, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 400V VGE = 15V RG = 5Ω

APTGF90DA60T1G – Rev 0 August, 2007 www.microsemi.com 6 – 6 Cies Cres Coes 100 1000 10000 01 0 2 0 3 0 4 0 5 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 150 200 250 0 200 400 600 800 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current Hard switching ZCS ZVS 120 160 200 20 40 60 80 100 120 IC, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 5Ω TJ = 125°C TC = 75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.