APTGF90DA60D1 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Low stray inductance - M5 power connectors
- High level of integration Benefits
- Outstanding performance at high frequency operation
- Stable temperature behavior
- Very rugged
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat Boost Chopper NPT IGBT Power Module
APTGF90DA60D1 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 2 - 3 Electrical Characteristics All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.95 2.45 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 100A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1.5 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 4300 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 400 pF Td(on) Turn-on Delay Time 25 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2W 20 ns Td(on) Turn-on Delay Time 26 Tr Rise Time 11 Td(off) Turn-off Delay Time 150 Tf Fall Time 30 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2W 2.9 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 100A VGE = 0V Tj = 125°C 1.2 V ER Reverse Recovery Energy IF = 100A VR = 300V di/dt =800A/µs Tj = 125°C 3.2 mJ Tj = 25°C 7.7 Qrr Reverse Recovery Charge IF = 100A VR = 300V di/dt =800A/µs Tj = 125°C 13 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.28 RthJC Junction to Case Diode 0.50 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 For terminals M5 2 3.5 Torque Mounting torque To Heatsink M6 3 5 N.m Wt Package Weight 180 g
APTGF90DA60D1 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 3 - 3 Package outline APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.