APTGF75DH120T3G MICROSEMI | Alldatasheet

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • High level of integration
  • Internal thermistor for temperature monitoring Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • Easy paralleling due to positive TC of VCEsat
  • RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 100 IC Continuous Collector Current Tc = 80°C 75 ICM Pulsed Collector Current T c = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 500 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 150A @ 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 3230 CR3CR1 CR2 CR4 3129 722 15 16 13 14 182023 22 11 12 28 27 26 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … VCES = 1200V IC = 75A @ Tc = 80°C Asymmetrical - Bridge NPT IGBT Power Module

APTGF75DH120T3G – Rev 0 April, 2009 www.microsemi.com 2-5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 500 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 75A Tj = 125°C 3.9 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 2.5 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 5.1 Coes Output Capacitance 0.7 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.4 nF QG Gate charge VGE=±15V, IC=75A VCE=600V 0.8 µC Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 20 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 30 ns Eon Turn-on Switching Energy T j = 125°C 9 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 75A RG = 7.5Ω Tj = 125°C 4 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 450 A Diode ratings and characteristics (CR2 & CR3) Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 60 A IF = 60A 2.5 3 IF = 120A 3 VF Diode Forward Voltage IF = 60A T j = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time Tj = 125°C 350 ns Tj = 25°C 560 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 2890 nC CR1 & CR4 are IGBT protection diodes only

APTGF75DH120T3G – Rev 0 April, 2009 www.microsemi.com 3-5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.25 RthJC Junction to Case Thermal Resistance Diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 110 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ ∆R25/R25 5 % B25/85 T 25 = 298.15 K 3952 K ∆B/B T C=100°C 4 % ⎛ − TTB RRT 11exp See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTGF75DH120T3G – Rev 0 April, 2009 www.microsemi.com 4-5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 0123456 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9V 100 125 150 0123456 V CE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff 0 25 50 75 100 125 150 I C (A) E (mJ) VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C Eon Eoff 0 1 02 03 04 05 06 07 0 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 75A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 125 150 175 0 300 600 900 1200 1500 VCE (V) IC (A) VGE=15V TJ=125°C RG=7.5 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF75DH120T3G – Rev 0 April, 2009 www.microsemi.com 5-5 Forward Characteristic of diode TJ=25°C TJ=125°C 100 125 150 00 . 511 . 522 . 533 . 5 VF (V) IF (A) hard switching ZCS ZVS 100 0 2 04 06 08 0 1 0 0 IC (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% RG=7.5 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.2 0.4 0.6 0.8 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.