APTGF75DH120T ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Easy paralleling due to positive TC of VCEsat
  • Low profile Asymmetrical - Bridge NPT IGBT Power Module

APTGF75DH120T – Rev 0 January, 2005 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 0.1 2 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 4 mA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 75A Tj = 125°C 3.9 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 2.5 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 5.1 Coes Output Capacitance 0.7 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.4 nF Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 20 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time 30 ns Eon Turn-on Switching Energy 9 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 4 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 100 A IF = 100A 2.0 2.5 IF = 200A 2.3 VF Diode Forward Voltage IF = 100A T j = 125°C 1.8 V Tj = 25°C 420 trr Reverse Recovery Time IF = 100A VR = 800V di/dt =200A/µs Tj = 125°C 580 ns Tj = 25°C 1.2 Qrr Reverse Recovery Charge IF = 100A VR = 800V di/dt =200A/µs Tj = 125°C 5.3 µC

APTGF75DH120T – Rev 0 January, 2005 APT website – http://www.advancedpower.com 3 - 5 Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 kΩ B 25/85 T 25 = 298.16 K 4080 K  − TT B RRT 11exp Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.25 RthJC Junction to Case Diode 0.6 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M5 4.7 N.m Wt Package Weight 160 g Package outline T: Thermistor temperature RT: Thermistor value at T

APTGF75DH120T – Rev 0 January, 2005 APT website – http://www.advancedpower.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 0123456 VCE (V) IC (A) Output Characteristics VGE=15V VGE=1 2V VGE=20V VGE=9V 100 125 150 0123456 V CE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 5 6 7 8 9 10 11 12 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff 0 25 50 75 100 125 150 I C (A) E (mJ) VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C Eon Eoff 0 1 02 03 04 05 06 07 0 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 75A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 125 150 175 0 300 600 900 1200 1500 V CE (V) IC (A) VGE=15V TJ=125°C RG=7.5 Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF75DH120T – Rev 0 January, 2005 APT website – http://www.advancedpower.com 5 - 5 Forward Characteristic of diode TJ=2 5°C TJ=125°C 100 150 200 250 00 . 511 . 522 . 53 V F (V) IC (A) hard switching ZCS ZVS 100 0 2 04 06 08 0 1 0 0 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% RG=7.5 Ω TJ=12 5°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.