APTGF660U60D4G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • M6 connectors for power
  • M4 connectors for signal
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS Compliant Single switch NPT IGBT Power Module

APTGF660U60D4G – Rev 2 July, 2008 www.microsemi.com 2-5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.95 2.45 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 800A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 16mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 2400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 36 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 3.2 nF QG Gate charge VGE=15V, IC=800A VCE=300V 2 µC Td(on) Turn-on Delay Time 150 Tr Rise Time 72 Td(off) Turn-off Delay Time 530 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 800A RG = 16Ω 40 ns Td(on) Turn-on Delay Time 160 Tr Rise Time 75 Td(off) Turn-off Delay Time 550 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 800A RG = 16Ω 50 ns Eon Turn on Energy T j = 125°C 36 mJ Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 800A RG = 16Ω Tj = 125°C 33 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 3600 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRRM Maximum Reverse Leakage Current V R = 600V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 800 A Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 800A VGE = 0V Tj = 125°C 1.2 V Tj = 25°C 150 trr Reverse Recovery Time Tj = 125°C 250 ns Tj = 25°C 57 Qrr Reverse Recovery Charge Tj = 125°C 80 µC Tj = 25°C 11.6 Err Reverse Recovery Energy IF = 800A VR = 300V di/dt =7000A/µs Tj = 125°C 22.8 mJ

APTGF660U60D4G – Rev 2 July, 2008 www.microsemi.com 3-5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.044 RthJC Junction to Case Thermal Resistance Diode 0.085 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 M6 3 5 Torque Mounting torque M4 1 2 N.m Wt Package Weight 350 g

APTGF660U60D4G – Rev 2 July, 2008 www.microsemi.com 4-5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 400 800 1200 1600 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12VVGE=20V VGE=9V 400 800 1200 1600 012345 VCE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 400 800 1200 1600 56789 1 0 1 1 1 2 VGE (V) IC (A) Energy losses vs Collector Current Eon Eoff Err 0 300 600 900 1200 I C (A) E (mJ) VCE = 300V VGE = 15V RG = 16 Ω TJ = 125°C Eon Eoff Err 100 10 20 30 40 50 60 Gate Resistance (ohms) E (mJ) VCE = 300V VGE =15V IC = 800A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 400 800 1200 1600 2000 0 100 200 300 400 500 600 VCE (V) IC (A) VGE=15V TJ=125°C RG=16 Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.01 0.02 0.03 0.04 0.05 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF660U60D4G – Rev 2 July, 2008 www.microsemi.com 5-5 hard switching ZCS ZVS 0 200 400 600 800 1000 I C (A) Fmax, Operating Frequency (kHz) VCE=300V D=50% RG=16Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current Forward Characteristic of diode TJ=25°C TJ=125°C 400 800 1200 1600 V F (V) IF (A) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.