APTGF50X120E2 ADPOW | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Very low stray inductance
- High level of integration Benefits
- Stable temperature behavior
- Very rugged
- Solderable terminals for easy PCB mounting
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Low profile
3 Phase bridge
APTGF50X120E2(P2) – Rev 0 November, 2003 APT website – http://www.advancedpower.com 2 - 4
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 1200 V Tj = 25°C 0.8 1 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 4 mA Tj = 25°C 2.5 3.0 VCE(on) Collector Emitter on Voltage VGE =15V IC = 50A Tj = 125°C 3.1 3.7 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2 mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3300 Coes Output Capacitance 500 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 220 pF Td(on) Turn-on Delay Time 44 100 Tr Rise Time 56 100 Td(off) Turn-off Delay Time 380 500 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 22W 70 100 ns Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 2.3 2.8 VF Diode Forward Voltage IF = 50A VGE = 0V Tj = 125°C 1.8 V trr Reverse Recovery Time IF = 50A VR = 600V di/dt =800A/µs Tj = 125°C 0.2 µs Tj = 25°C 2.8 Qrr Reverse Recovery Charge IF = 50A VR = 600V di/dt =800A/µs Tj = 125°C 8 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.35 RthJC Junction to Case Diode 0.7 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 Torque Mounting torque To Heatsink M5 2 3.5 N.m Wt Package Weight 185 g
APTGF50X120E2(P2) – Rev 0 November, 2003 APT website – http://www.advancedpower.com 3 - 4 Package outline Pin out: APTGF50X120E2 (Long pins) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTGF50X120E2(P2) – Rev 0 November, 2003 APT website – http://www.advancedpower.com 4 - 4 Package outline Pin out: APTGF50X120P2 (Short pins) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.