APTGF50TDU120P ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very low (12mm) profile
  • Easy paralleling due to positive TC of VCEsat
  • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. E5/ E6 E3/ E4 E1/E2 C 5C 3 E5/E6E3 C 4 C 6 E1E1/E2 E3/E4 C 1 C 2 Symbol Parameter Ma x ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 75 IC Continuous Collector Current Tc = 80°C 50 ICM Pulsed Collector Current T c = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 312 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 150A @ 1200V VCES = 1200V IC = 50A @ Tc = 80°C Triple dual Common Source NPT IGBT Power Module

APTGF50TDU120P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 500 µA 1200 V Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 2500 µA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 50A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 1 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20 V, VCE = 0V 100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3450 Coes Output Capacitance 330 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 220 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 35 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 50A 200 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 ns Eon Turn-on Switchi ng Energy X 5.4 Eoff Turn-off Switching Energy Y Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5Ω 2.3 mJ Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switchi ng Energy X 6.9 Eoff Turn-off Switching Energy Y Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A RG = 5Ω 3.05 mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1

APTGF50TDU120P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 3 - 6 Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A IF = 60A 2 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A T j = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time Tj = 125°C 470 ns Tj = 25°C 1200 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 4000 nC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.4 RthJC Junction to Case Diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M6 3 5 N.m Wt Package Weight 250 g Package outline 5 places (3:1)

APTGF50TDU120P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 120 160 200 02468 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 100 150 200 250 300 0 4 8 12 16 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 50 100 150 200 250 300 350 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 50A TJ = 25°C Ic=100A Ic=50A Ic=25A 9 1 01 11 21 31 41 51 6 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature

APTGF50TDU120P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 5 - 6 VGE = 15V 0 25 50 75 100 125 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 5Ω VGE=15V 100 140 180 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 5Ω Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 25 50 75 100 125 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 5Ω

APTGF50TDU120P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 120 140 160 04 0 0 8 0 0 1 2 0 0 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Hard switching ZCS ZVS 100 120 10 20 30 40 50 60 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.