APTGF50H60T3G

APTGF50H60T3G ADPOW | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

Features

• Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring Benefits
• Outstandi ng performance at hi gh frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase leg of twice the current capability
• RoHS compliant Full - Bridge NPT IGBT Power Module

APTGF50H60T3G – Rev 1 November, 2005 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.7 2.0 2.45 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 2200 Coes Output Capacitance 323 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 200 pF Qg Total gate Charge 166 Qge Gate – Emitter Charge 20 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 50A 100 nC Td(on) Turn-on Delay Ti me 40 Tr Rise Time 9 Td(off) Turn-off Delay Time 120 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω 12 ns Td(on) Turn-on Delay Ti me 42 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time 21 Eon Turn-on Switching Energy 0.5 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω ns Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 500 µA IF DC Forward Current Tc = 70°C 30 A IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A T j = 125°C 1.4 V Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC

APTGF50H60T3G – Rev 1 November, 2005 APT website – http://www.advancedpower.com 3 - 6 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.5 RthJC Junction to Case Thermal Resistance Diode 1.2 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 1.5 4.7 N.m Wt Package Weight 110 g T: Thermistor temperature RT: Thermistor value at T

APTGF50H60T3G – Rev 1 November, 2005 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 100 150 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 100 125 150 0123456789 1 0 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 25 50 75 100 125 150 175 200 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 50A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 100 150 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Dut y cycle

APTGF50H60T3G – Rev 1 November, 2005 APT website – http://www.advancedpower.com 5 - 6 VGE = 15V 0 25 50 75 100 125 150 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 125°C VCE = 400V RG = 2.7Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 125 150 175 200 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 2.7Ω VGE=15V, TJ=125°C 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 2.7Ω TJ=125°C, VGE=15V 0.5 1.5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.7Ω TJ = 125°C 0.5 1.5 2.5 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7Ω Eon, 50A Eon, 50A Eoff, 50A 0.5 1.5 2.5 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C 100 120 0 200 400 600 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V)

APTGF50H60T3G – Rev 1 November, 2005 APT website – http://www.advancedpower.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.1 0.2 0.3 0.4 0.5 0.6 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current hard switching ZCSZVS 120 160 200 240 0 2 04 06 08 0 1 0 0 IC, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.